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1. WO2000042652 - SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD

Publication Number WO/2000/042652
Publication Date 20.07.2000
International Application No. PCT/JP2000/000079
International Filing Date 11.01.2000
Chapter 2 Demand Filed 11.08.2000
IPC
C23C 16/26 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
26Deposition of carbon only
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
H01L 21/768 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
CPC
C23C 16/26
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
26Deposition of carbon only
H01L 21/0212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02118carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
0212the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/3127
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
312Organic layers, e.g. photoresist
3127Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
H01L 21/7682
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
7682the dielectric comprising air gaps
H01L 21/76834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76801characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
76829characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
76834formation of thin insulating films on the sidewalls or on top of conductors
Applicants
  • TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-chome Minato-ku Tokyo 107-8481, JP (AllExceptUS)
  • ISHIZUKA, Shuichi [JP/JP]; JP (UsOnly)
Inventors
  • ISHIZUKA, Shuichi; JP
Agents
  • SATO, Kazuo ; Kyowa Patent & Law Office Fuji Building, Room 323 2-3, Marunouchi 3-chome Chiyoda-ku Tokyo 100-0005, JP
Priority Data
11/546812.01.1999JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) SEMICONDUCTOR DEVICE AND ITS PRODUCTION METHOD
(FR) DISPOSITIF A SEMICONDUCTEUR ET PROCEDE DE FABRICATION
Abstract
(EN)
A wiring layer (34) where wiring lines (35) and recesses (30) between adjacent wiring lines (35) are formed is provided on a first interlayer insulating film (41). A second interlayer insulating film (43) being a CF film made of a filming material such as CF which has poor burying properties is provided on the wiring layer (34). An example of a gas for producing the material is C6F6 gas. A plasma is produced from the gas and the CF film is formed on the wiring layer (34) while preventing any CF film from being buried in the recesses (30). Thus, air gaps (36) each having a shape along the recesses (30) are formed between the wiring lines (35). Such a semiconductor device has a reduced capacitance between wiring lines while the mechanical stress is hardly weakened.
(FR)
L'invention concerne une couche de câblage (34) dans laquelle sont formées des lignes de câblage (35) et des cavités (30) entre les lignes de câblage adjacentes (35), cette couche de câblage (34) étant établie sur un premier film d'isolation intercouches (41). Un second film d'isolation intercouches (43) à base de carbone et de fluor, par exemple, ayant de faibles propriétés d'enfouissement, est établi sur la couche de câblage (34). On peut utiliser du gaz C6F6 comme gaz pour la production du matériau constituant le film. Un plasma est réalisé à partir du gaz, et le film à base de carbone et de fluor est constitué sur la couche de câblage (34). Simultanément, on empêche l'enfouissement dudit film dans les cavités (30). Ainsi, des poches d'air (36) ayant chacune une forme établie le long des cavités (30) sont constituées entre les lignes de câblage (35). Le type de dispositif à semiconducteur considéré présente une capacité réduite entre les lignes de câblage, tandis que la contrainte mécanique est à peine réduite.
Also published as
US09657052
Latest bibliographic data on file with the International Bureau