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1. WO2000042645 - LOW TEMPERATURE PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME

Publication Number WO/2000/042645
Publication Date 20.07.2000
International Application No. PCT/US2000/000566
International Filing Date 10.01.2000
Chapter 2 Demand Filed 02.08.2000
IPC
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 27/115 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
CPC
C30B 7/005
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
7Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
005Epitaxial layer growth
H01L 21/02197
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02197the material having a perovskite structure, e.g. BaTiO3
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
H01L 21/02337
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02296characterised by the treatment performed before or after the formation of the layer
02318post-treatment
02337treatment by exposure to a gas or vapour
Applicants
  • SYMETRIX CORPORATION [US/US]; 5055 Mark Dabling Boulevard Colorado Springs, CO 80918, US
Inventors
  • SOLAYAPPAN, Narayan; US
  • JOSHI, Vikram; US
  • PAZ DE ARAUJO, Carlos, A.; US
Agents
  • FOREST, Carl, A. ; Patton Boggs LLP P.O. Box 270930 Louisville, CO 80027, US
Priority Data
09/228,90711.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LOW TEMPERATURE PROCESS FOR FABRICATING LAYERED SUPERLATTICE MATERIALS AND MAKING ELECTRONIC DEVICES INCLUDING SAME
(FR) PROCEDE BASSE TEMPERATURE DE FABRICATION DE MATERIAUX A SUPER TREILLIS AINSI QUE DE DISPOSITIF INCORPORANT CES MATERIAUX
Abstract
(EN)
A coating of liquid precursor containing a metal is applied (224) to a first electrode (122, 420), baked (226) on a hot plate in oxygen ambient at a temperature not exceeding 300 °C for five minutes, then RTP annealed (228) at 675 °C for 30 seconds. The coating is then annealed (230) in oxygen or nitrogen ambient at 700 °C for one hour to form a thin film (124, 422) of layered superlattice material with a thickness not exceeding 100 nm. A second electrode (126, 424) is applied to form a capacitor, and a second anneal (234) is performed in oxygen or nitrogen ambient at a temperature not exceeding 700 °C. If the material is strontium bismuth tantalate, the precursor contains u mole-equivalents of strontium, v mole-equivalents of bismuth, and w mole-equivalents of tantalum, where 0.8 $m(F) u $m(F) 1.0, 2.0 $m(F) v $m(F) 2.3, and 1.9 $m(F) w $m(F) 2.1.
(FR)
Selon l'invention, on applique (224) un revêtement d'un précurseur liquide contenant un métal sur une première électrode (122, 420), puis on cuit (226) ce revêtement sur une plaque chaude, dans une atmosphère ambiante à base d'oxygène, chauffée à une température n'excédant pas 300 °C, pendant cinq minutes, et on le recuit (228) par traitement thermique rapide, à une température de 675 °C, pendant trente secondes. On recuit (230) ensuite le revêtement dans une atmosphère ambiante à base d'oxygène ou d'azote, à 700 °C, pendant une heure, afin de former une couche mince (124, 422) d'un matériau en couche à super treillis dont l'épaisseur ne dépasse pas 100 nm. On applique une seconde électrode (126, 424), afin de former un condensateur, et on exécute un second recuit (234) dans une atmosphère ambiante à base d'oxygène ou d'azote, à une température ne dépassant pas 700 °C. Si le matériau est du tantalate de strontium bismuth, le précurseur contient u équivalents molaires de strontium, v équivalents molaires de bismuth, et w équivalents molaire de tantale, dans les quantités suivantes : 0,8 < u < 1,0, 2,0 < v < 2,3, et 1.9 < w < 2,1.
Also published as
Latest bibliographic data on file with the International Bureau