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1. WO2000042643 - FERROELECTRIC DEVICE WITH CAPPING LAYER AND METHOD OF MAKING SAME

Publication Number WO/2000/042643
Publication Date 20.07.2000
International Application No. PCT/US1999/024226
International Filing Date 15.10.1999
Chapter 2 Demand Filed 07.06.2000
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
H01L 21/31691
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
31691with perovskite structure
H01L 28/56
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
55with a dielectric comprising a perovskite structure material
56the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
Applicants
  • SYMETRIX CORPORATION [US/US]; 5055 Mark Dabling Boulevard Colorado Springs, CO 80918, US
  • MATSUSHITA ELECTRIC INDUSTRIAL CO. LTD. [JP/JP]; 1006, Oaza Kadoma Kadoma-shi, Osaka 571-8501, JP
Inventors
  • HAYASHI, Shinichiro; JP
  • OTSUKI, Tatsuo; JP
  • PAZ DE ARAUJO, Carlos, A.; US
Agents
  • FOREST, Carl, A. ; Patton Boggs LLP P.O. Box 270930 Louisville, CO 80027, US
Priority Data
09/229,88314.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) FERROELECTRIC DEVICE WITH CAPPING LAYER AND METHOD OF MAKING SAME
(FR) DISPOSITIF FERROELECTRIQUE AVEC COUCHE DE RECOUVREMENT ET SON PROCEDE DE FABRICATION
Abstract
(EN)
A ferroelectric device (100, 200) includes a ferroelectric layer (112) and an electrode (116, 110). The ferroelectric material is made of a perovskite or a layered superlattice material. A superlattice generator metal oxide is deposited as a capping layer (114, 204) between said ferroelectric layer and said electrode to improve the residual polarization capacity of the ferroelectric layer.
(FR)
Cette invention concerne un dispositif ferroélectrique (100, 200) comprenant une couche ferroélectrique (112) et une électrode (116, 110). Le matériau ferroélectrique est fait d'un matériau à base de pérovskite ou d'un matériau en couches à structure hétérarchique. De l'oxyde métallique générateur de structure hétérarchique est déposé sous forme d'une couche de recouvrement (114, 204) entre ladite couche ferroélectrique et ladite électrode afin d'améliorer la capacité de polarisation résiduelle de la couche ferroélectrique.
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