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1. WO2000042630 - SYSTEM FOR PRODUCTION OF LARGE AREA DISPLAY PANELS WITH IMPROVED PRECISION

Publication Number WO/2000/042630
Publication Date 20.07.2000
International Application No. PCT/SE2000/000097
International Filing Date 18.01.2000
Chapter 2 Demand Filed 14.07.2000
IPC
G03F 7/20 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
H01J 9/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
9Apparatus or processes specially adapted for the manufacture of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
02Manufacture of electrodes or electrode systems
CPC
G03F 1/144
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
14Originals characterised by structural details, e.g. supports, cover layers, pellicle rings
144Auxiliary patterns; Corrected patterns, e.g. proximity correction, grey level masks
G03F 7/704
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70375Imaging systems not otherwise provided for, e.g. multiphoton lithography; Imaging systems comprising means for converting one type of radiation into another type of radiation, systems comprising mask with photo-cathode
70383Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
704Scanned exposure beam, e.g. raster-, rotary- and vector scanning
G03F 7/70425
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
G03F 7/70433
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70425Imaging strategies, e.g. for increasing throughput, printing product fields larger than the image field, compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching, double patterning
70433Layout for increasing efficiency, for compensating imaging errors, e.g. layout of exposure fields,; Use of mask features for increasing efficiency, for compensating imaging errors
G03F 7/705
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
705Modelling and simulation from physical phenomena up to complete wafer process or whole workflow in wafer fabrication
G03F 7/70525
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70491Information management and control, including software
70525Controlling normal operating mode, e.g. matching different apparatus, remote control, prediction of failure
Applicants
  • MICRONIC LASER SYSTEMS AB [SE/SE]; Box 3141 S-183 03 Täby, SE (AllExceptUS)
  • EKBERG, Peter [SE/SE]; SE (UsOnly)
Inventors
  • EKBERG, Peter; SE
Agents
  • AWAPATENT AB; Box 11394 S-404 28 Göteborg, SE
Priority Data
9900114-118.01.1999SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SYSTEM FOR PRODUCTION OF LARGE AREA DISPLAY PANELS WITH IMPROVED PRECISION
(FR) SYSTEME DE PRODUCTION DE PANNEAUX D'AFFICHAGE A GRANDE SURFACE PRESENTANT UNE PRECISION AMELIOREE
Abstract
(EN)
The present invention relates to a method and a system for producing large area display panels with improved precision. The system according to the invention comprises a first mask producing means (1) for producing a mask with a predetermined pattern according to input data and microlithographic exposing means (2) for exposing a photosensitive substrate with light and with use of a mask to impose the pattern of the mask on the substrate, whereby said substrate has a layer being sensitive to said light. Further, the system comprises measuring means (3) for measuring the pattern on the substrate and detecting deviations relative to the intended pattern as given by the input data, and second mask producing means (1) for producing a second mask according to second input data, and being controllable according to said measurement, to modify the pattern on the mask to compensate for the measured deviations, and thus compensate for production distortions.
(FR)
L'invention concerne un procédé et un système de production de panneaux d'affichage à grande surface présentant un précision améliorée. Le système de l'invention comporte un premier moyen de production de masque (1) pour produire un masque présentant un motif prédéterminé en fonction de données d'entrée, et un moyen d'exposition microlithographique (2) pour exposer un substrat photosensible à la lumière et imprimer, à l'aide d'un masque, le motif du masque sur le substrat. Ledit substrat comporte une couche sensible à ladite lumière. De plus, le système comporte un moyen de mesure (3) pour mesurer le motif sur le substrat et détecter des écarts par rapport au motif voulu, déterminé par les données d'entrée ; et un deuxième moyen de production de masque (1) pour produire un deuxième masque en fonction de deuxièmes données d'entrée, ce moyen pouvant être commandé en fonction desdites mesures pour modifier le motif du masque, afin de compenser les écarts mesurés et permettre ainsi de compenser des distorsions de production.
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