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1. WO2000042621 - EPITAXIAL THIN FILMS

Publication Number WO/2000/042621
Publication Date 20.07.2000
International Application No. PCT/US2000/000824
International Filing Date 12.01.2000
Chapter 2 Demand Filed 09.08.2000
IPC
B01D 71/02 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
71Semi-permeable membranes for separation processes or apparatus characterised by the material; Manufacturing processes specially adapted therefor
02Inorganic material
C30B 29/22 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
16Oxides
22Complex oxides
H01B 1/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
1Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
H01G 4/06 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
018Dielectrics
06Solid dielectrics
H01G 4/33 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
33Thin- or thick-film capacitors
H01L 21/20 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
CPC
H01L 39/2461
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39Devices using superconductivity; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof
24Processes or apparatus peculiar to the manufacture or treatment of devices provided for in H01L39/00 or of parts thereof
2419the superconducting material comprising copper oxide
2422Processes for depositing or forming superconductor layers
2454characterised by the substrate
2461Intermediate layers, e.g. for growth control
Applicants
  • MICROCOATING TECHNOLOGIES, INC. [US/US]; 3901 Green Industrial Way Chamblee, GA 30341, US (AllExceptUS)
  • HUNT, Andrew, T. [US/US]; US (UsOnly)
  • DESHPANDE, Girish [IN/US]; US (UsOnly)
  • COUSINS, Donald [JM/US]; US (UsOnly)
  • HWANG, Tzyy-Jiuan, Jan [US/US]; US (UsOnly)
  • LIN, Wen-Yi [--/US]; US (UsOnly)
  • SHOUP, Shara, S. [US/US]; US (UsOnly)
Inventors
  • HUNT, Andrew, T.; US
  • DESHPANDE, Girish; US
  • COUSINS, Donald; US
  • HWANG, Tzyy-Jiuan, Jan; US
  • LIN, Wen-Yi; US
  • SHOUP, Shara, S.; US
Agents
  • KELLY, Edward, J. ; Foley, Hoag & Eliot, LLP One Post Office Square Boston, MA 02109, US
Priority Data
60/115,51912.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) EPITAXIAL THIN FILMS
(FR) COUCHES MINCES EPITAXIALES
Abstract
(EN)
Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.
(FR)
L'invention concerne des couches minces épitaxiales qui s'utilisent comme couches tampons destinées à des supraconducteurs à haute température, à des électrolytes pour piles à combustible oxyde solide (SOFC), à des membranes de séparation gazeuse ou à des matériels diélectriques équipant des dispositifs électroniques. La mise en oeuvre d'une méthode CCVD, CACVD ou de n'importe quelle autre méthode de dépôt appropriée permet de former des couches épitaxiales sans porosité présentant des joints de grain parfaits et une structure dense. Plusieurs types de matériau différents peuvent être utilisés pour former les couches tampons dans des supraconducteurs à haute température. En outre, l'utilisation de couches minces épitaxiales pour former des électrolytes et des électrodes dans des SOFC produit une microstructure densifiée sans porosité, présentant une interface et un joint de grain parfaits. L'invention concerne également des membranes de séparation gazeuse destinées à produire de l'oxygène et de l'hydrogène. Ces membranes semi perméables sont constituées de couches submicroniques d'oxydes mixtes conducteurs de haute qualité, denses, étanches au gaz et exemptes de trous d'épingle, disposées sur des substrats céramiques. L'invention concerne en outre des couches minces épitaxiales utilisées comme matériel diélectrique dans des condensateurs. Ces condensateurs sont utilisés selon leurs valeurs capacitives, lesquelles dépendent de la structure physique et de la permitivité diélectrique des condensateurs. Les couches minces épitaxiales de l'invention forment des couches diélectriques à faible perte ayant une permitivité extrêmement élevée. Cette permitivité élevée permet de former des condensateurs dont la capacité peut être réglée par application d'une polarisation en continu entre leurs électrodes.
Also published as
ININ/PCT/2001/00629/DEL
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