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1. WO2000042614 - READ/WRITE ARCHITECTURE FOR A MRAM

Publication Number WO/2000/042614
Publication Date 20.07.2000
International Application No. PCT/DE2000/000026
International Filing Date 03.01.2000
Chapter 2 Demand Filed 31.05.2000
IPC
G11C 11/16 2006.01
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
CPC
G11C 11/1659
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1659Cell access
G11C 11/1673
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1673Reading or sensing circuits or methods
G11C 11/1675
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
165Auxiliary circuits
1675Writing or programming circuits or methods
Applicants
  • INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Str. 53 D-81541 München, DE (AllExceptUS)
  • RÖSNER, Wolfgang [DE/DE]; DE (UsOnly)
  • SCHWARZL, Siegfried [DE/DE]; DE (UsOnly)
Inventors
  • RÖSNER, Wolfgang; DE
  • SCHWARZL, Siegfried; DE
Agents
  • MÜLLER, Frithjof, E.; Müller & Hoffmann Innere Wiener Strasse 17 81667 München, DE
Priority Data
199 00 979.113.01.1999DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) SCHREIB-/LESEARCHITEKTUR FÜR MRAM
(EN) READ/WRITE ARCHITECTURE FOR A MRAM
(FR) ARCHITECTURE D'ECRITURE/LECTURE POUR RAM MAGNETORESISTIVE
Abstract
(DE)
Die Erfindung betrifft eine Schreib-/Lesearchitektur für einen MRAM, die beim Lesevorgang Widerstandsbrücken verwendet, in denen eine Speicherzelle mit bekanntem Magnetisierungszustand mit einer zu messenden Speicherzelle verglichen wird.
(EN)
The invention relates to a read/write architecture for an MRAM. The inventive read/write architecture uses resistance bridges during the read process, whereby a memory cell in said resistance bridges having a known state of magnetization is compared with a memory cell that is to be measured.
(FR)
Architecture d'écriture/lecture pour une RAM magnétorésistive qui utilise, lors du processus de lecture, des ponts de résistance dans lesquels une cellule de mémoire ayant un état de magnétisation connu est comparée avec une cellule de mémoire à mesurer.
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