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1. WO2000042473 - MULTILAYER ATTENUATING PHASE-SHIFT MASKS

Publication Number WO/2000/042473
Publication Date 20.07.2000
International Application No. PCT/US2000/000871
International Filing Date 13.01.2000
Chapter 2 Demand Filed 27.07.2000
IPC
G03F 1/00 2012.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
1Originals for photomechanical production of textured or patterned surfaces, e.g. masks, photo-masks or reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
H01L 21/027 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 1/32
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
1Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
26Phase shift masks [PSM]; PSM blanks; Preparation thereof
32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof
Applicants
  • E.I. DU PONT DE NEMOURS AND COMPANY [US/US]; 1007 Market Street Wilmington, DE 19898, US
Inventors
  • CARCIA, Peter, Francis; US
Agents
  • SIEGELL, Barbara, C.; E.I. du Pont de Nemours and Company Legal Patent Records Center 1007 Market Street Wilmington, DE 19898, US
Priority Data
60/115,90614.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MULTILAYER ATTENUATING PHASE-SHIFT MASKS
(FR) MASQUE DE DEPHASAGE D'ATTENUATION MULTICOUCHES
Abstract
(EN)
Disclosed are attenuating embedded phase shift masks capable of producing a phase shift of 180° with an optical transmissivity of at least 0.001 at a selected lithographic wavelength less than 200 nm. The masks are comprised of distinct contiguous alternating contiguous layers of an optically transparent material consisting essentially of an oxide selected from the group consisting of oxides of Al and Si and layers of an optically absorbing material consisting essentially of a nitride selected from the group consisting of nitrides of A1 and Si. Such masks are commonly known in the art as attenuating (embedded) phase shift masks or half-tone phase shift masks.
(FR)
L'invention concerne des masques de déphasage d'atténuation enfouis capables de produire un déphasage de 180° avec une transmissibilité optique d'au moins 0,001 à une longueur d'ondes lithographique sélectionnée qui est inférieure à 200 nm. Les masques sont constitués de couches distinctes, contiguës et alternées d'un matériau optiquement transparent constitué principalement d'un oxyde sélectionné dans le groupe constitué d'oxydes de Al et de Si et de couches d'un matériau optiquement absorbant constitué principalement d'un nitrure sélectionné du groupe constitué de nitrures de Al et de Si. Ces masques s'utilisent couramment dans l'industrie en tant que masques de déphasage d'atténuation (enfouis) ou de déphasage en demi-teintes.
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