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1. WO2000042243 - PROCESS OF STACKING AND MELTING POLYCRYSTALLINE SILICON FOR HIGH QUALITY SINGLE CRYSTAL PRODUCTION

Publication Number WO/2000/042243
Publication Date 20.07.2000
International Application No. PCT/US1999/029817
International Filing Date 16.12.1999
Chapter 2 Demand Filed 13.06.2000
IPC
C30B 15/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
CPC
C30B 15/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
02adding crystallising materials or reactants forming it in situ to the melt
Applicants
  • MEMC ELECTRONIC MATERIALS, INC. [US/US]; 501 Pearl Drive P.O. Box 8 St. Peters, MO 63376, US
Inventors
  • HOLDER, John, D.; US
  • SREEDHARAMURTHY, Hariprasad; US
Agents
  • HEJLEK, Edward, J. ; Senniger, Powers, Leavitt & Roedel 16th floor One Metropolitan Square St. Louis, MO 63102, US
Priority Data
09/229,54013.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PROCESS OF STACKING AND MELTING POLYCRYSTALLINE SILICON FOR HIGH QUALITY SINGLE CRYSTAL PRODUCTION
(FR) PROCEDE D'EMPILAGE ET DE FUSION DE SILICIUM POLYCRISTALLIN DESTINE A LA PRODUCTION DE MONOCRISTAUX DE GRANDE QUALITE
Abstract
(EN)
An improved process for forming a single crystal silicon ingot from solid, varying sized chunks of polycrystalline silicon source material according to the Czochralski method. The process includes classifying each chunk of source material by size, placing chunks of source material into a crucible to form a stack in the crucible. The chunks are generally placed within at least three regions of the crucible that are pre-selected according to the size classifications of the chunks. The stack within the crucible is melted in an inert environment at an elevated temperature to form a source melt, and the temperature of the crucible and the source melt is stabilized to an equilibrium level suitable for crystal growth. The single crystal silicon ingot is pulled from the source melt according to the Czochralski method. In another aspect, the step of melting the stack is taken while the crucible has an ambient pressure that is greater than an ambient pressure when the step of stabilizing the temperature is taken.
(FR)
L'invention concerne un perfectionnement de la technique Czochralski de formation d'un lingot de silicium monocristallin à partir de morceaux solides, de différentes tailles, d'un matériau source en silicium. A cet effet, on trie les morceaux du matériau source selon leur taille et on les place en pile dans un creuset. On place généralement les morceaux dans au moins trois parties du creuset, prédéterminées par rapport au tri par tailles des morceaux. On fait ensuite fondre la pile située dans le creuset dans un environnement inerte à température élevée de façon à obtenir une matière fondue source. On stabilise la température du creuset et de la matière fondue source à un niveau d'équilibre adéquat pour le tirage des cristaux. On tire le lingot de silicium monocristallin de la matière fondue source selon la technique de Czochralski. Selon un autre aspect de l'invention, la fusion de la pile intervient lorsque la pression ambiante du creuset est supérieure à celle qui prévaut lors de la stabilisation de la température.
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