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1. WO2000042236 - PROCESSING SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION

Publication Number WO/2000/042236
Publication Date 20.07.2000
International Application No. PCT/US1999/030570
International Filing Date 22.12.1999
Chapter 2 Demand Filed 26.07.2000
IPC
C23C 16/44 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
C23C 16/448 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
CPC
C23C 16/4486
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
448characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
4486by producing an aerosol and subsequent evaporation of the droplets or particles
C23C 16/45521
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45519Inert gas curtains
45521the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
C23C 16/4558
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
44characterised by the method of coating
455characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
45563Gas nozzles
4558Perforated rings
Applicants
  • TOKYO ELECTRON LIMITED [JP/JP]; TBS Broadcast Center 3-6, Akasaka 5-chome Minato-ku Tokyo 107, JP
  • TOKYO ELECTRON ARIZONA, INC. [US/US]; 2120 W. Guadalupe Road Gilbert, AZ 85233-8205, US (JP)
Inventors
  • HILLMAN, Joseph, T.; US
Agents
  • SUMME, Kurt, A. ; Wood, Herron & Evans, L.L.P. 2700 Carew Tower Cincinnati, OH 45202, US
  • LLOYD WISE, TREGEAR & CO. Commonwealth House; 1-19 New Oxford Street London WC1A 1LW England, GB
Priority Data
09/231,35713.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PROCESSING SYSTEM AND METHOD FOR CHEMICAL VAPOR DEPOSITION
(FR) SYSTEME ET PROCEDE DE TRAITEMENT DE DEPOT CHIMIQUE EN PHASE VAPEUR D'UNE COUCHE METALLIQUE AU MOYEN D'UN PRECURSEUR LIQUIDE
Abstract
(EN)
A system (10) for depositing a layer of metal onto a substrate (16) through a chemical vapor deposition process comprises a process chamber (12) for receiving and processing a substrate (16). A vaporizer element (82) is positioned in a vaporization space (76) of the chamber adjacent the process space (14), and is operable for being heated to a temperature sufficient to vaporize a liquid metal-containing precursor, such as a copper precursor, into a process gas for delivery to said process space (14). A nozzle (74) is positioned opposite the vaporizer element (82) and is connectable to a liquid metal-containing precursor supply to atomize and direct the liquid metal-containing precursor into the vaporization space (76) and against the vaporizer element (82). A gas-dispersing element (78, 80) is positioned between the vaporization space (76) and the process space (14) to disperse the gas into the process space (14) and proximate the substrate (16).
(FR)
L'invention concerne un système (10) permettant de déposer une couche métallique sur un substrat (16) par un procédé de dépôt chimique en phase vapeur, comprenant une chambre de traitement (12) destinée à recevoir et à traiter un substrat (16). Un vaporisateur est placé dans un espace de vaporisation (76) de la chambre jouxtant l'espace de traitement (14). Ledit vaporisateur est conçu pour être chauffé à une température suffisante pour assurer la vaporisation d'un précurseur contenant du métal liquide, tel qu'un précurseur de cuivre, dans un gaz de traitement pour passer à l'espace de traitement (14). Une buse (74), placée opposée à l'élément vaporisateur (82), est raccordée à l'alimentation en précurseur contenant du métal liquide de façon à atomiser et à diriger ledit précurseur à l'intérieur de l'espace de vaporisation (76) et contre le vaporisateur (82). Un élément de dispersion de gaz (78, 80) est placé entre l'espace de vaporisation (76) et l'espace de traitement (14) de façon à disperser le gaz dans l'espace de traitement (14) et à proximité du substrat (16).
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