Processing

Please wait...

PATENTSCOPE will be unavailable a few hours for maintenance reason on Sunday 05.04.2020 at 10:00 AM CEST
Settings

Settings

1. WO2000042233 - MONOLITHIC FABRICATION OF FLUIDIC STRUCTURES

Publication Number WO/2000/042233
Publication Date 20.07.2000
International Application No. PCT/US2000/000013
International Filing Date 12.01.2000
Chapter 2 Demand Filed 20.06.2000
IPC
G01N 27/447 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
27Investigating or analysing materials by the use of electric, electro-chemical, or magnetic means
26by investigating electrochemical variables; by using electrolysis or electrophoresis
416Systems
447using electrophoresis
G01N 30/02 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02Column chromatography
G01N 30/28 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02Column chromatography
26Conditioning of the fluid carrier; Flow patterns
28Control of physical parameters of the fluid carrier
G01N 30/60 2006.01
GPHYSICS
01MEASURING; TESTING
NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
30Investigating or analysing materials by separation into components using adsorption, absorption or similar phenomena or using ion-exchange, e.g. chromatography
02Column chromatography
60Construction of the column
CPC
B01L 2200/12
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2200Solutions for specific problems relating to chemical or physical laboratory apparatus
12Specific details about manufacturing devices
B01L 2300/0654
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2300Additional constructional details
06Auxiliary integrated devices, integrated components
0627Sensor or part of a sensor is integrated
0654Lenses; Optical fibres
B01L 2300/0816
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2300Additional constructional details
08Geometry, shape and general structure
0809rectangular shaped
0816Cards, e.g. flat sample carriers usually with flow in two horizontal directions
B01L 2300/0867
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2300Additional constructional details
08Geometry, shape and general structure
0861Configuration of multiple channels and/or chambers in a single devices
0867Multiple inlets and one sample wells, e.g. mixing, dilution
B01L 2300/0887
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2300Additional constructional details
08Geometry, shape and general structure
0887Laminated structure
B01L 2300/1827
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
LCHEMICAL OR PHYSICAL LABORATORY APPARATUS FOR GENERAL USE
2300Additional constructional details
18Means for temperature control
1805Conductive heating, heat from thermostatted solids is conducted to receptacles, e.g. heating plates, blocks
1827using resistive heater
Applicants
  • CORNELL RESEARCH FOUNDATION, INC. [US/US]; 20 Thornwood Drive, Suite 105 Ithaca, NY 14850, US (AllExceptUS)
  • CRAIGHEAD, Harold, G. [US/US]; US (UsOnly)
  • TURNER, Stephen, W. [US/US]; US (UsOnly)
  • FOQUET, Mathieu, E. [US/US]; US (UsOnly)
Inventors
  • CRAIGHEAD, Harold, G.; US
  • TURNER, Stephen, W.; US
  • FOQUET, Mathieu, E.; US
Agents
  • VIKSNINS, Ann, S.; Schwegman, Lundberg, Owessner & Kluth P.O. Box 2938 Minneapolis, MN 55402, US
Priority Data
60/115,85413.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MONOLITHIC FABRICATION OF FLUIDIC STRUCTURES
(FR) FABRICATION DE STRUCTURES FLUIDIQUES MONOLITHIQUES
Abstract
(EN)
A new technique for fabricating two-dimensional and three-dimensional fluid microchannels for molecular studies includes fabricating a monolithic unit using planar processing techniques adapted from semiconductor electronics fabrication. A fluid gap between a floor layer (12) and a ceiling layer (20) is provided by an intermediate patterned sacrificial layer (14) which is removed by a wet chemical etch. The process may be used to produce a structure such as a filter or artificial gel by using Electron beam lithography to define a square array of 100 nm holes (30) in the sacrificial layer. CVD silicon nitride (54) is applied over the sacrificial layer and enters the array of holes to produce closely spaced pillars. The sacrificial layer can be removed with a wet chemical etch through access holes in the ceiling layer, after which the access holes are sealed with VLTO silicon dioxide (64).
(FR)
L'invention concerne une nouvelle technique de fabrication de microcanaux de fluide bidimensionnels et tridimensionnels, à utiliser pour des études moléculaires. Ledit procédé consiste à fabriquer une unité monolithique par des techniques de traitement planar adaptées de la fabrication de composants électroniques semi-conducteurs. Un espace pour fluide est ménagé entre une couche inférieure (12) et une couche supérieure (20), au moyen d'une couche sacrificielle intermédiaire à motif (14) qui est enlevée par gravure humide. Ledit procédé peut être utilisé pour la production d'une structure, telle qu'un filtre ou un gel artificiel, au moyen de la lithographie par faisceau électronique, de manière qu'un réseau carré d'orifices de 100 nm (30) soit créé dans la couche sacrificielle. Du nitrure de silicium déposé (54) est appliqué sur la couche sacrificielle et pénètre dans le groupe d'orifices, de manière que des colonnettes rapprochées soient formées. La couche sacrificielle peut être enlevée par gravure humide, à travers les orifices d'accès de la couche supérieure, après quoi lesdits orifices sont bouchés à l'aide d'oxyde de silicium (64) très basses températures.
Also published as
US09905027
Latest bibliographic data on file with the International Bureau