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1. WO2000042231 - POLYCRYSTALLINE SILICON GERMANIUM FILMS FOR FORMING MICRO-ELECTROMECHANICAL SYSTEMS

Publication Number WO/2000/042231
Publication Date 20.07.2000
International Application No. PCT/US2000/000964
International Filing Date 14.01.2000
Chapter 2 Demand Filed 09.08.2000
IPC
B81B 3/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
CPC
B81B 2203/0118
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
01Suspended structures, i.e. structures allowing a movement
0118Cantilevers
B81C 1/00246
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00222Integrating an electronic processing unit with a micromechanical structure
00246Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
B81C 2201/0109
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
0102Surface micromachining
0105Sacrificial layer
0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
B81C 2203/0735
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2203Forming microstructural systems
07Integrating an electronic processing unit with a micromechanical structure
0707Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
0735Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit
Y10S 438/933
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
438Semiconductor device manufacturing: process
933Germanium or silicon or Ge-Si on III-V
Applicants
  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA [US/US]; Suite 510 2150 Shattuck Avenue Berkeley, CA 94720-0620, US (AllExceptUS)
  • FRANKE, Andrea [US/US]; US (UsOnly)
  • HOWE, Roger, T. [US/US]; US (UsOnly)
  • KING, Tsu-Jae [US/US]; US (UsOnly)
Inventors
  • FRANKE, Andrea; US
  • HOWE, Roger, T.; US
  • KING, Tsu-Jae; US
Agents
  • EGAN, William, J. ; Fish & Richardson P.C. 2200 Sand Hill Road #200 Menlo Park, CA 94025-6936, US
Priority Data
60/116,02415.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) POLYCRYSTALLINE SILICON GERMANIUM FILMS FOR FORMING MICRO-ELECTROMECHANICAL SYSTEMS
(FR) FILMS DE POLYSILICIUM-GERMANIUM PERMETTANT DE REALISER DES SYSTEMES MICRO-ELECTROMECANIQUES
Abstract
(EN)
This invention relates to micro-electromechanical systems using silicon-germanium films. The invention features a process for forming a micro-electromechanical system on a substrate. This process includes depositing a sacrificial layer of silicon-germanium onto the substrate; depositing a structural layer of silicon-germanium onto the sacrificial layer, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and removing a portion of the sacrificial layer. A MEMS resonator (105) as seen in figure 1B can be produced by the present invention.
(FR)
L'invention concerne des systèmes micro-électromécaniques utilisant des films de silicium-germanium.
Also published as
Latest bibliographic data on file with the International Bureau