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1. WO2000041250 - SPIN DEPENDENT TUNNELING SENSOR

Publication Number WO/2000/041250
Publication Date 13.07.2000
International Application No. PCT/US2000/000039
International Filing Date 03.01.2000
Chapter 2 Demand Filed 14.07.2000
IPC
G01R 33/06 2006.01
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
G11B 5/39 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads
39using magneto-resistive devices
H01L 43/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
08Magnetic-field-controlled resistors
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
G01R 33/06
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
G01R 33/098
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
098comprising tunnel junctions, e.g. tunnel magnetoresistance sensors
G11B 2005/3996
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
3996large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
G11B 5/3903
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
3903using magnetic thin film layers or their effects, the films being part of integrated structures
Applicants
  • NONVOLATILE ELECTRONICS, INCORPORATED [US/US]; 11409 Valley View Road Eden Prairie, MN 55344, US
Inventors
  • DAUGHTON, James, M.; US
  • TONDRA, Mark, C.; US
  • POHM, Arthur, V.; US
Agents
  • NEILS, Theodore, F. ; Kinney & Lange, P.A. Kinney & Lange Building 312 South Third Street Minneapolis, MN 55415-1002, US
Priority Data
09/226,46006.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) SPIN DEPENDENT TUNNELING SENSOR
(FR) CAPTEUR A EFFET TUNNEL DEPENDANT DU SPIN
Abstract
(EN)
A magnetic field sensor having a junction structure (23) in a sensor (21, 22) cell using a dielectric intermediate separating material (14) with two major surfaces on one of which is a base anisotropic ferromagnetic thin-film (12, 13) which is also on a base eelctrode (11', 12, 13), and on the other of which there is at least one of a plurality of separate anisotropic ferromagnetic thin-films (15, 16, 17) but of differing rotational responses (18) to external magnetic fields. Similar structures have a separated film (15, 16, 17) in each that can be interconnected to one another with the interconnections (25) extending at least in part substantially parallel to the widths of the separated films (15, 16, 17), and the separated films (15, 16, 17) can have lengths with gradually narrowing widths to the ends thereof as can the base electrode (11', 12, 13). One or more planar coils (27, 29) can be supported at least in part on the separated films (15, 16, 17).
(FR)
L'invention concerne un capteur de champ magnétique comprenant une structure (23) de jonction placée dans un élément de capteur. Cette structure de jonction comprend un matériau (14) de séparation intermédiaire diélectrique présentant deux surfaces principales. Sur l'une de ces surface se trouve un film (12, 13) mince ferromagnétique anisotrope de base disposé sur une électrode (11', 12, 13) de base, et sur l'autre se trouve au moins un film mince faisant partie d'une pluralité de films (15, 16, 17) minces ferromagnétiques anisotropes distincts présentant des réponses (18) rotationnelles distinctes aux champs magnétiques externes. D'autres structures du même type comprennent chacune un film (15, 16, 17) séparé, les films pouvant être reliés les uns aux autres par le biais d'interconnexions (25) qui s'étendent au moins en partie dans une direction sensiblement parallèle à la largeur des films (15, 16, 17) séparés. Les films (15, 16, 17) séparés ainsi que l'électrode (11', 12, 13) de base peuvent en outre présenter une largeur diminuant graduellement en direction des extrémités, dans le sens de la longueur. Une ou plusieurs bobines (27, 29) planes peuvent être supportées au moins en partie sur les films (15, 16, 17) séparés.
Also published as
Latest bibliographic data on file with the International Bureau