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1. WO2000041236 - INTEGRATED CIRCUIT MEMORY CELL UPON A DIELECTRIC BASE

Publication Number WO/2000/041236
Publication Date 13.07.2000
International Application No. PCT/US1999/019104
International Filing Date 20.08.1999
IPC
H01L 21/822 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
H01L 27/105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 27/115 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
CPC
H01L 21/8221
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8221Three dimensional integrated circuits stacked in different levels
H01L 27/105
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
H01L 27/115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
H01L 27/11551
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
115Electrically programmable read-only memories; Multistep manufacturing processes therefor
11517with floating gate
11551characterised by three-dimensional arrangements, e.g. with cells on different height levels
Applicants
  • ADVANCED MICRO DEVICES, INC. [US/US]; One AMD Place Mail Stop 68 P.O. Box 3453 Sunnyvale, CA 94088-3453, US
Inventors
  • GARDNER, Mark, I.; US
  • FULFORD, H., Jim, Jr.; US
Agents
  • APPERLEY, Elizabeth, A.; Advanced Micro Devices, Inc. M/S 562 5204 East Ben White Boulevard Austin, TX 78741, US
Priority Data
09/227,51406.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) INTEGRATED CIRCUIT MEMORY CELL UPON A DIELECTRIC BASE
(FR) CELLULE DE MEMOIRE DE CIRCUIT INTEGRE SUR UNE BASE DIELECTRIQUE
Abstract
(EN)
A method for fabricating an integrated circuit is presented wherein a dielectric base (206) is provided. A first gate layer (208) is formed upon the dielectric base (206). An intergate dielectriclayer (212) is formed upon the first gate layer (208). A second gate layer (216) is formed upon the intergate dielectric layer (212). Select portions of the first gate layer (208), the intergate dielectric layer (212), and the second gate layer (216) are then removed to form a memory cell (221) upon the dielectric base (206).
(FR)
L'invention concerne un procédé pour fabriquer un circuit intégré qui consiste à créer une base diélectrique (206). Une première couche de grille (208) est formée sur la base diélectrique (206). Une couche diélectrique intégrée (212) est formée sur la première couche de grille (208). Une deuxième couche de grille (216) est formée sur la couche diélectrique intégrée (212). Des parties sélectionnées de la première couche de grille (208), la couche diélectrique intégrée (212) et la deuxième couche de grille (216) sont ensuite retirées pour former une cellule mémoire (221) sur la base diélectrique (206).
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