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1. WO2000041231 - DIELECTRIC FILMS FROM ORGANOHYDRIDOSILOXANE RESINS

Publication Number WO/2000/041231
Publication Date 13.07.2000
International Application No. PCT/US2000/000523
International Filing Date 07.01.2000
Chapter 2 Demand Filed 07.08.2000
IPC
H01L 21/312 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
CPC
H01L 21/02126
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02126the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
H01L 21/02216
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02214the compound comprising silicon and oxygen
02216the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Applicants
  • ALLIEDSIGNAL, INC. [US/US]; 101 Columbia Road P.O. Box 2245 Morristown, NJ 07962-2245, US
Inventors
  • HACKER, Nigel, P.; US
  • LEFFERTS, Scott; US
  • SLESSOR, Michael, D.; US
  • FIGGE, Lisa, K.; US
Agents
  • CRISS, Roger, H. ; AlliedSignal Inc. (Law Dept., Attn: A. Olinger) 101 Columbia Road P.O. Box 2245 Morristown, NJ 07962-2245, US
Priority Data
09/227,03507.01.1999US
09/227,49807.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) DIELECTRIC FILMS FROM ORGANOHYDRIDOSILOXANE RESINS
(FR) FILM DIELECTRIQUE FABRIQUE A PARTIR DE RESINES D'ORGANO-HYDRIDOSILOXANE
Abstract
(EN)
A method of making a dielectric film on a substrate from a composition containing an organohydridosiloxane resin is presented. The organohydridosiloxane resins have a cage conformation. The process of making a dielectric film includes forming a solution of a solvent and the organohydridosiloxane resin, dispensing the solution on a substrate, spinning the substrate, baking the substrate to remove the solvent, and curing the substrate to form the dielectric film. Dielectric films of the present invention exhibit dielectric constants of approximately 3.0 or lower.
(FR)
L'invention concerne un procédé de fabrication d'un film diélectrique, sur un substrat, à partir d'une composition contenant une résine d'organo-hydridosiloxane. Les résines d'organo-hydridosiloxane présentent une configuration en cage. Le procédé de fabrication d'un film diélectrique comprend l'élaboration d'une solution, contenant un solvant et la résine d'organo-hydridosiloxane, l'application de la solution sur un substrat, le filage du substrat, la cuisson du substrat au four pour éliminer le solvant, et la réticulation du substrat pour former le film diélectrique. Les films diélectriques selon la présente invention présentent des constantes diélectriques d'environ 3,0 ou moins.
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