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1. WO2000041229 - PLASMA APPARATUS AND LOWER ELECTRODE THEREOF

Publication Number WO/2000/041229
Publication Date 13.07.2000
International Application No. PCT/JP1999/007182
International Filing Date 21.12.1999
Chapter 2 Demand Filed 16.06.2000
IPC
B23K 10/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
10Welding or cutting by means of a plasma
H01L 21/3065 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
3065Plasma etching; Reactive-ion etching
H01L 21/68 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
68for positioning, orientation or alignment
CPC
H01L 21/67069
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67069for drying etching
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
Applicants
  • TOKYO ELECTRON LIMITED [JP/JP]; 3-6, Akasaka 5-chome Minato-ku Tokyo 107-8481, JP (AllExceptUS)
  • TAGUCHI, Chihiro [JP/JP]; JP (UsOnly)
  • NONAKA, Ryo [JP/JP]; JP (UsOnly)
Inventors
  • TAGUCHI, Chihiro; JP
  • NONAKA, Ryo; JP
Agents
  • SUZUYE, Takehiko ; Suzuye & Suzuye 7-2, Kasumigaseki 3-chome Chiyoda-ku Tokyo 100-0013, JP
Priority Data
10/37202728.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) PLASMA APPARATUS AND LOWER ELECTRODE THEREOF
(FR) APPAREIL A PLASMA ET ELECTRODE INFERIEURE ASSOCIEE
Abstract
(EN)
A lower electrode (1) for plasma processing comprises a conductive base (2), a dielectric layer (4) provided on the base (2) for holding a wafer (W), an electrostatic chuck (3) provided in the dielectric layer (4) and having an electrode (5) insulated electrically from the base (2), a first conductor (7) with one end connected to the electrode (5), a DC power supply (8) connected to the other end of the first conductor (7), a second conductor (10) with one end connected to the base (2), a high-frequency power supply (11) connected to the other end of the second conductor (10), the third conductor (14) for interconnecting the first conductor (7) and second conductor (10), and a capacitor (13) provided on the third conductor (14). This electrode structure (1) is placed in a chamber (21) for plasma processing.
(FR)
L'invention concerne une électrode inférieure (1) destinée à un traitement au plasma, laquelle électrode comprend une base conductrice (2), une couche diélectrique (4) située sur la base (2) pour le support d'une plaquette (W), un mandrin électrostique (3) situé dans la couche diélectrique (4) et comportant une électrode (5) isolée électriquement de la base (2), un premier conducteur (7) dont une extrémité est connectée à l'électrode (5), une alimentation (8) en courant continu reliée à l'autre extrémité du premier conducteur (7), un deuxième conducteur (10) dont une extrémité est connectée à la base (2), une alimentation (11) haute fréquence reliée à l'autre extrémité du deuxième conducteur (10), un troisième conducteur (14) destiné à relier le premier conducteur (7) et le deuxième conducteur (10), et un condensateur (13) associé au troisième conducteur (14). Cette structure (1) d'électrode est disposée dans une chambre (21) en vue du traitement au plasma.
Also published as
Latest bibliographic data on file with the International Bureau