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1. WO2000041228 - METHOD OF PLASMA PROCESSING

Publication Number WO/2000/041228
Publication Date 13.07.2000
International Application No. PCT/JP1999/007176
International Filing Date 21.12.1999
Chapter 2 Demand Filed 11.05.2000
IPC
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
H01J 37/3299
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
32917Plasma diagnostics
3299Feedback systems
H01L 21/31116
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31105Etching inorganic layers
31111by chemical means
31116by dry-etching
Applicants
  • TOKYO ELECTRON YAMANASHI LIMITED [JP/JP]; 2381-1, Kitagejyo, Fujii-machi Nirasaki-shi, Yamanashi 407-0003, JP (AllExceptUS)
  • JAPAN SCIENCE AND TECHNOLOGY CORPORATION [JP/JP]; 1-8, Honmachi 4-chome Kawaguchi-shi Saitama 332-0012, JP (AllExceptUS)
  • HAMA, Kiichi [JP/JP]; JP (UsOnly)
  • ISHIHARA, Hiroyuki [JP/JP]; JP (UsOnly)
  • KITAMURA, Akinori [JP/JP]; JP (UsOnly)
Inventors
  • HAMA, Kiichi; JP
  • ISHIHARA, Hiroyuki; JP
  • KITAMURA, Akinori; JP
Agents
  • KAMEYA, Yoshiaki ; Shinjuku Akebonobashi Building 1-12, Sumiyoshicho Shinjuku-ku Tokyo 162-0065, JP
Priority Data
10/37750928.12.1998JP
10/37751028.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF PLASMA PROCESSING
(FR) PROCEDE DE TRAITEMENT AU PLASMA
Abstract
(EN)
A plasma is generated from fluorocarbon-containing gas introduced into a process chamber of an etching device to etch a SiO2 layer deposited on a wafer. The contents of etchant and by-products in the plasma are measured by infrared laser absorption analysis. The measured contents are compared with predetermined contents of the etchant and by-products corresponding to an increase in aspect ratio of contact holes. The amount of O2 to be added is adjusted so that the measured contents may agree with the predetermined contents. The amount of O2 added to the process gas is continuously increased with the increase in the aspect ratio. Contact holes can be formed in the SiO2 layer without damage to the photoresist layer while preventing etch stops.
(FR)
On génère un plasma à partir d'un gaz renfermant des fluorocarbones que l'on introduit dans la chambre de traitement d'un dispositif de gravure, en vue de la gravure d'une couche de SiO2 déposée sur une plaquette de semiconducteur. On mesure les teneurs en agent de gravure et en produits dérivés du plasma par une analyse d'absorption au laser infrarouge. On compare les teneurs mesurées aux teneurs prédéterminées de l'agent de gravure et des produits dérivés correspondant à une augmentation du facteur de forme des trous de contact. On ajuste la quantité d'oxygène à ajouter de manière que les teneurs mesurées concordent avec les teneurs prédéterminées. On augmente en continu la quantité d'oxygène à ajouter au gaz de traitement en fonction de l'augmentation du facteur de forme. On peut ainsi former des trous de contact dans la couche de SiO2 sans endommager la couche de photorésist, et sans avoir à utiliser de couches d'arrêt d'attaque.
Also published as
Latest bibliographic data on file with the International Bureau