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1. WO2000041207 - A METHOD AND APPARATUS THAT DETERMINES CHARGED PARTICLE BEAM SHAPE CODES

Publication Number WO/2000/041207
Publication Date 13.07.2000
International Application No. PCT/US2000/000095
International Filing Date 04.01.2000
IPC
H01J 37/302 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
302Controlling tubes by external information, e.g. programme control
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
H01J 37/302
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
302Controlling tubes by external information, e.g. programme control
H01J 37/3026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
302Controlling tubes by external information, e.g. programme control
3023Programme control
3026Patterning strategy
H01J 37/3174
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3174Particle-beam lithography, e.g. electron beam lithography
Y10S 438/949
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
438Semiconductor device manufacturing: process
942Masking
948Radiation resist
949Energy beam treating radiation resist on semiconductor
Applicants
  • ETEC SYSTEMS, INC. [US/US]; 26460 Systems, Inc. Hayward, CA 94545, US
Inventors
  • RISHTON, Stephen, A.; US
  • WANG, Weidong; US
  • BOEGLI, Volker; US
  • HOFMANN, Ulrich; US
Agents
  • KLIVANS, Norman, R. ; Skjerven, Morrill, MacPherson, Franklin & Friel LLP 25 Metro Drive, Suite 700 San Jose, CA 95110, US
Priority Data
09/226,92606.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A METHOD AND APPARATUS THAT DETERMINES CHARGED PARTICLE BEAM SHAPE CODES
(FR) PROCEDE ET APPAREIL POUR DETERMINER LES CODES DE FORME DE FAISCEAUX DE PARTICULES CHARGEES
Abstract
(EN)
A lithography method and apparatus which represent a substrate surface as gray level values and determine a shape data that specifies a shape and position of a flash field. The apparatus receives a pattern in a vector format, represents the substrate surface as a grid of pixels, and then represents each pixel as a gray level value specifying a proportion of the pixel that includes the pattern. Subsequently the apparatus constructs a matrix of a quadrant of four pixels and surrounding pixels, modifies the matrix so that three intermediate shapes corresponding to an exposed region of the quadrant may be provided, determines an intermediate shape data of the quadrant; and performs a reverse modification on the shape to determine the shape data that specifies a flash field.
(FR)
L'invention concerne un appareil et un procédé de lithographie qui représentent une surface de substrat sous forme de valeurs de niveaux de gris et déterminent les données de forme qui indiquent une forme et une position d'un champ de flash. L'appareil reçoit un motif dans un format vectoriel, représente la surface du substrat comme une grille de pixels puis représente chaque pixel comme une valeur de niveau de gris indiquant une proportion du pixel qui comprend le motif. L'appareil construit ensuite une matrice constituée d'un quadrant de quatre pixels et de pixels environnants, modifie la matrice de manière à fournir trois formes intermédiaires correspondant à une région exposée du quadrant, détermine les données relatives à une forme intermédiaire du quadrant et, enfin, effectue une modification inverse pour déterminer les données de forme qui indiquent un champ de flash.
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