Processing

Please wait...

Settings

Settings

1. WO2000041205 - APPARATUS AND METHOD FOR MONITORING AND TUNING AN ION BEAM IN ION IMPLANTATION APPARATUS

Publication Number WO/2000/041205
Publication Date 13.07.2000
International Application No. PCT/GB1999/004402
International Filing Date 23.12.1999
Chapter 2 Demand Filed 07.08.2000
IPC
H01J 37/147 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
H01J 37/304 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
304Controlling tubes by information coming from the objects, e.g. correction signals
H01J 37/317 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
CPC
H01J 2237/1501
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
15Means for deflecting or directing discharge
1501Beam alignment means or procedures
H01J 37/1471
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
1471for centering, aligning or positioning of ray or beam
H01J 37/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
304Controlling tubes by information coming from the objects ; or from the beam; , e.g. correction signals
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
Applicants
  • APPLIED MATERIALS, INC. [US/US]; 3050 Bowers Avenue Santa Clara, CA 95054-3299, US (AllExceptUS)
  • HOLMES, Andrew, James, Timothy [GB/GB]; GB (UsOnly)
  • BURGIN, David, Richard [GB/GB]; GB (UsOnly)
  • POVALL, Simon [GB/GB]; GB (UsOnly)
  • ARMOUR, David, George [GB/GB]; GB (UsOnly)
  • ARNOLD, Drew [US/US]; US (UsOnly)
Inventors
  • HOLMES, Andrew, James, Timothy; GB
  • BURGIN, David, Richard; GB
  • POVALL, Simon; GB
  • ARMOUR, David, George; GB
  • ARNOLD, Drew; US
Agents
  • BOULT WADE TENNANT; Verulam Gardens 70 Gray's Inn Road London WC1X 8BT, GB
Priority Data
9900145.505.01.1999GB
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) APPARATUS AND METHOD FOR MONITORING AND TUNING AN ION BEAM IN ION IMPLANTATION APPARATUS
(FR) APPAREIL ET PROCEDE PERMETTANT DE CONTROLER ET D'ACCORDER UN FAISCEAU D'IONS DANS UN APPAREIL D'IMPLANTATION IONIQUE
Abstract
(EN)
An ion implanter has an ion source (10) and an ion beam extraction assembly (50) for extracting the ions. The extraction assembly (50) is a tetrode structure and one of the pairs of extraction electrodes (51) has left and right ports (54, 55) located in opposite sides of the ion beam emerging from the ion source (10). The left and right electrode ports (54, 55) are electrically isolated from each other and connected to independent voltage sources (210, 230). The ion implanter also has a baffle plate (60) at the entrance to a mass analyser (90) downstream of the extraction assembly (50). The baffle plate (60) is also split into two halves (60' and 60'). By measuring the beam current incident on the two halves (60', 60') of the baffle (60), the relative voltages supplied to the left and right electrode parts (54, 55) may be adjusted so as to steer the ion beam and adjust the angle of incidence of the longitudinal axis thereof relative to the input of the analysing magnet (90).
(FR)
L'invention porte sur un implanteur ionique possédant une source (10) ionique et un ensemble (50) d'extraction de faisceaux ioniques destiné à extraire les ions. L'ensemble (50) d'extraction est une structure tétrode et l'une des paires des électrodes (51) d'extraction possède des ports gauche et droit (54, 55) situés dans les côtés opposés de l'émergence du faisceau ionique provenant de la source (10) ionique. Les ports gauche et droit (54, 55) des électrodes sont isolés électriquement et raccordés à des sources de tension (210, 230) indépendantes. L'implanteur ionique comporte également une plaque (60) de dérivation au niveau de l'admission d'un analyseur (90) de masse en aval de l'ensemble (50) d'extraction. La plaque (60) de dérivation est également divisée en deux moitiés (60' et 60'). En mesurant le courant du faisceau tombant en incidence sur les deux moitiés (60', 60') de la plaque de dérivation (60), les tensions relatives fournies aux ports gauche et droit (54, 55) des électrodes peuvent être ajustées de façon à diriger le faisceau ionique et régler l'angle d'incidence de l'axe longitudinal du faisceau par rapport à l'entrée de l'aimant (90) d'analyse.
Latest bibliographic data on file with the International Bureau