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1. WO2000041037 - METHOD OF REMOVING PHOTORESIST MATERIAL WITH DIMETHYL SULFOXIDE

Publication Number WO/2000/041037
Publication Date 13.07.2000
International Application No. PCT/US1999/030683
International Filing Date 21.12.1999
Chapter 2 Demand Filed 26.07.2000
IPC
G03F 7/42 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
CPC
G03F 7/426
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
422using liquids only
426containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
G03F 7/428
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
428using ultrasonic means only
H01L 21/31133
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31127Etching organic layers
31133by chemical means
Applicants
  • LAM RESEARCH CORPORATION [US/US]; 4650 Cushing Parkway, Bldg. CA-1 Fremont, CA 94538-6516, US
Inventors
  • LANG, John, E.; US
Agents
  • HICKMAN, Paul, L.; Hickman Stephens Coleman & Hughes, LLP P.O. Box 52037 Palo Alto, CA 94303-0746, US
Priority Data
09/274,19422.03.1999US
60/114,49331.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF REMOVING PHOTORESIST MATERIAL WITH DIMETHYL SULFOXIDE
(FR) PROCEDE D'ELIMINATION D'UN MATERIAU DE PHOTORESIST A L'AIDE D'UN DIMETHYLSULFOXIDE
Abstract
(EN)
A method of removing photoresist material from a semiconductor substrate includes providing a semiconductor substrate having a layer comprised of a low dielectric constant material and a layer comprised of photoresist material disposed over the layer comprised of the low dielectric constant material. The layer comprised of photoresist material is removed with dimethyl sulfoxide (DMSO). The layer of photoresist material is preferably removed by placing the semiconductor substrate in an ultrasonic bath containing DMSO in liquid form. The ultrasonic bath is preferably heated to at least about 50 °C.
(FR)
L'invention concerne un procédé permettant d'éliminer un matériau de photorésist d'un substrat de semi-conducteur, qui consiste à fournir un substrat de semi-conducteur possédant une couche constituée d'un matériau à faible constante diélectrique et d'une couche constituée de matériau de photorésist déposée sur ladite couche constituée de matériau à faible constante diélectrique. La couche constitué de matériau de photorésist est éliminée à l'aide d'un diméthylsulfoxide (DMSO). La couche de matériau de photorésist est, de préférence, éliminée par placement du substrat de semi-conducteur dans un bain à ultrasons contenant DMSO sous forme liquide. Le bain à ultrasons est, de préférence, chauffé à au moins environ 50 °C.
Also published as
Latest bibliographic data on file with the International Bureau