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1. WO2000040786 - METHOD FOR PRODUCING SINGLE CRYSTAL AND PULLING DEVICE

Publication Number WO/2000/040786
Publication Date 13.07.2000
International Application No. PCT/JP1999/006815
International Filing Date 06.12.1999
IPC
C30B 15/14 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
14Heating of the melt or the crystallised materials
C30B 15/30 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
C30B 15/32 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
32Seed holders, e.g. chucks
CPC
C30B 15/14
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
14Heating of the melt or the crystallised materials
C30B 15/30
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
30Mechanisms for rotating or moving either the melt or the crystal
C30B 15/32
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
32Seed holders, e.g. chucks
Y10S 117/90
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
Y10S 117/911
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
911Seed or rod holders
Y10T 117/1068
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
117Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
10Apparatus
1024for crystallization from liquid or supercritical state
1032Seed pulling
1068including heating or cooling details [e.g., shield configuration]
Applicants
  • SHIN-ETSU HANDOTAI CO., LTD. [JP/JP]; 4-2, Marunouchi 1-chome Chiyoda-ku, Tokyo 100-0005, JP (AllExceptUS)
  • IINO, Eiichi [JP/JP]; JP (UsOnly)
  • KITAGAWA, Kouji [JP/JP]; JP (UsOnly)
Inventors
  • IINO, Eiichi; JP
  • KITAGAWA, Kouji; JP
Agents
  • YOSHIMIYA, Mikio; Uenosansei Building 4F 6-4, Motoasakusa 2-chome Taito-ku, Tokyo 111-0041, JP
Priority Data
10/37279328.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR PRODUCING SINGLE CRYSTAL AND PULLING DEVICE
(FR) PROCEDE DE PRODUCTION DE MONOCRISTAL ET DISPOSITIF DE TIRAGE
Abstract
(EN)
A method for producing a single crystal and a pulling device characterized in that the temperature at and around the tip of the connection part connecting a wire for pulling a single crystal by the Czochralski method to a seed crystal holder is always below 1200 °C or, further, 800 °C. The material of the wire is one kind selected from among tungsten, stainless steel, and molybdenum. According to the invention, a pulling method and a pulling device are provided in which the temperature at and around the tip of the connection part connecting a wire to a seed crystal holder is so adjusted so as to be below the temperature at which degradation of the material of the wire starts during the period from the seeding for single crystal growth to the early stage of the pulling.
(FR)
L'invention concerne un procédé de production d'un monocristal et un dispositif de tirage se caractérisant par le fait que la température au sommet et autour du sommet de la partie reliant un fil de tirage de monocristal par le procédé de Czochralski à un support de cristal germe est toujours inférieure à 1200 °C ou même à 800 °C. La matière du fil est sélectionnée dans le groupe formé par le tungstène, l'acier inoxydable et le molybdène. L'invention décrit un procédé de tirage et un dispositif de tirage dans lesquels la température au sommet et autour du sommet de la partie reliant un fil à un support de cristal germe est réglée de manière à être inférieure à la température à laquelle commence la dégradation de la matière du fil dans l'intervalle compris entre l'ensemencement d'un monocristal et le début de la phase de tirage.
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