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1. WO2000040776 - IN SITU CHEMICAL GENERATOR AND METHOD

Publication Number WO/2000/040776
Publication Date 13.07.2000
International Application No. PCT/US2000/000231
International Filing Date 04.01.2000
Chapter 2 Demand Filed 19.07.2000
IPC
C01B 7/01 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
7Halogens; Halogen acids
01Chlorine; Hydrogen chloride
C01B 7/19 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
7Halogens; Halogen acids
19Fluorine; Hydrogen fluoride
C01B 17/76 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
17Sulfur; Compounds thereof
69Sulfur trioxide; Sulfuric acid
74Preparation
76by contact processes
C01B 21/068 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21Nitrogen; Compounds thereof
06Binary compounds of nitrogen with metals, with silicon, or with boron
068with silicon
C01B 21/26 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21Nitrogen; Compounds thereof
20Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
24Nitric oxide (NO)
26Preparation by catalytic oxidation of ammonia
C01B 21/30 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
21Nitrogen; Compounds thereof
20Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
24Nitric oxide (NO)
30Preparation by oxidation of nitrogen
CPC
C01B 17/76
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
17Sulfur; Compounds thereof
69Sulfur trioxide; Sulfuric acid
74Preparation
76by contact processes
C01B 21/26
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
21Nitrogen; Compounds thereof
20Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
24Nitric oxide (NO)
26Preparation by catalytic ; or non-catalytic; oxidation of ammonia
C01B 21/30
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
21Nitrogen; Compounds thereof
20Nitrogen oxides; Oxyacids of nitrogen; Salts thereof
24Nitric oxide (NO)
30Preparation by oxidation of nitrogen
C01B 33/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
33Silicon; Compounds thereof
02Silicon
C01B 7/01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
7Halogens; Halogen acids
01Chlorine; Hydrogen chloride
C01B 7/191
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
7Halogens; Halogen acids
19Fluorine; Hydrogen fluoride
191Hydrogen fluoride
Applicants
  • RONAL SYSTEMS CORPORATION [US/US]; 453 Ravendale Drive, Unit#C Mountain View, CA 94043, US
Inventors
  • BAR-GADDA, Ronny; US
Agents
  • WRIGHT, Edward, S. ; Flehr Hohbach Test Albritton & Herbert LLP Suite 3400 4 Embarcadero Center San Francisco, CA 94111-4187, US
Priority Data
09/225,92205.01.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) IN SITU CHEMICAL GENERATOR AND METHOD
(FR) GENERATEUR CHIMIQUE IN SITU ET PROCEDE ASSOCIE
Abstract
(EN)
Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radicals to form the chemical species at the point of use.
(FR)
L'invention concerne un générateur chimique et un procédé de production d'une espèce chimique à un point d'utilisation, tel que la chambre d'un réacteur dans laquelle une pièce, telle qu'une plaquette semi-conductrice, doit être traitée. L'espèce est produite par la création de radicaux libres et par la combinaison de ces radicaux de façon à former l'espèce chimique au point d'utilisation.
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