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1. WO2000040588 - LEWIS BASE ADDUCTS OF ANHYDROUS MONONUCLEAR TRIS(BETA-DIKETONATE) BISMUTH COMPOSITIONS FOR DEPOSITION OF BISMUTH-CONTAINING FILMS, AND METHOD OF MAKING THE SAME

Publication Number WO/2000/040588
Publication Date 13.07.2000
International Application No. PCT/US1999/023034
International Filing Date 04.10.1999
IPC
C07F 9/94 2006.01
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC, OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
9Compounds containing elements of Groups 5 or 15 of the Periodic System
94Bismuth compounds
CPC
C07F 9/94
CCHEMISTRY; METALLURGY
07ORGANIC CHEMISTRY
FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
9Compounds containing elements of Groups 5 or 15 of the Periodic System
94Bismuth compounds
C23C 16/409
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
409of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide
Y10S 427/101
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
427Coating processes
101Liquid Source Chemical Depostion, i.e. LSCVD or Aerosol Chemical Vapor Deposition, i.e. ACVD
Applicants
  • ADVANCED TECHNOLOGY MATERIALS, INC. [US/US]; 7 Commerce Drive Danbury, CT 06810, US
Inventors
  • BAUM, Thomas; US
  • DUBOIS, Raymond, H.; US
Agents
  • ZITZMANN, Oliver, A., M.; Advanced Technology Materials, Inc. 7 Commerce Drive Danbury, CT 06810, US
Priority Data
09/224,61431.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LEWIS BASE ADDUCTS OF ANHYDROUS MONONUCLEAR TRIS(BETA-DIKETONATE) BISMUTH COMPOSITIONS FOR DEPOSITION OF BISMUTH-CONTAINING FILMS, AND METHOD OF MAKING THE SAME
(FR) ADDUITS A BASE DE LEWIS POUR COMPOSITION DE TRIS(BETA-DICETONATO)BISMUTH MONONUCLEAIRE ANHYDRE, POUR LE DEPOT DE FILMS CONTENANT DU BISMUTH, ET LEUR PROCEDE DE FABRICATION
Abstract
(EN)
Anhydrous mononuclear Lewis base adducted tris($g(b)-diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris($g(b)-diketonato) bismuth complexes of the prior art.
(FR)
L'invention concerne des complexes de tris($g(b)-dicétonato) anhydre et mononucléaire avec adduit à base de Lewis, utiles en tant que précurseurs pour le dépôt chimique en phase vapeur de bismuth, en vue de la production de films contenant du bismuth et présentant une stoechiométrie, une morphologie et un caractère fonctionnel améliorés, par rapport aux films obtenus à partir de complexes de tris($g(b)-dicétonato)bismuth de la technique antérieure.
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