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1. WO2000039918 - ANALOGUE MODULATION METHOD AND MONOLITHIC INTEGRATED CIRCUIT WITH MIXER STAGE COMPRISING NON-POLARISED FIELD-EFFECT TRANSISTORS

Publication Number WO/2000/039918
Publication Date 06.07.2000
International Application No. PCT/FR1999/003276
International Filing Date 23.12.1999
Chapter 2 Demand Filed 01.07.2000
IPC
H03C 1/54 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
1Amplitude modulation
52Modulators in which carrier or one sideband is wholly or partially suppressed
54Balanced modulators, e.g. bridge type, ring type or double balanced type
H03C 7/02 2006.01
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
7Modulating electromagnetic waves
02in transmission lines, waveguides, cavity resonators or radiation fields of antennas
CPC
H03C 1/547
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
1Amplitude modulation
52Modulators in which carrier or one side-band are wholly or partially suppressed
54Balanced modulators, e.g. bridge type, ring type, double balanced type
542comprising semiconductor devices with at least three electrodes
547using field-effect transistors
H03C 7/025
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
CMODULATION
7Modulating electromagnetic waves
02in transmission line, waveguide, cavity resonator or radiation field of antenna
025using semiconductor devices
Applicants
  • CENTRE NATIONAL D'ETUDES SPATIALES (C.N.E.S.) [FR/FR]; 2, place Maurice Quentin F-75039 Paris Cedex 01, FR (AllExceptUS)
  • BOULANGER, Cyrille [FR/FR]; FR (UsOnly)
  • LAPIERRE, Luc [FR/FR]; FR (UsOnly)
Inventors
  • BOULANGER, Cyrille; FR
  • LAPIERRE, Luc; FR
Priority Data
98/1644424.12.1998FR
Publication Language French (FR)
Filing Language French (FR)
Designated States
Title
(EN) ANALOGUE MODULATION METHOD AND MONOLITHIC INTEGRATED CIRCUIT WITH MIXER STAGE COMPRISING NON-POLARISED FIELD-EFFECT TRANSISTORS
(FR) PROCEDE DE MODULATION ANALOGIQUE ET CIRCUIT INTEGRE MONOLITHIQUE A ETAGE MELANGEUR COMPRENANT DES TRANSISTORS A EFFET DE CHAMP NON POLARISES
Abstract
(EN)
The invention concerns a method and a circuit for analogue phase and/or amplitude modulation of a high frequency carrier signal with an Î or Q low frequency analogue modulation signal, comprising at a least mixer stage (5, 6) including two field-effect transistor, called modulation transistors (21, 22), mounted with the sources (23, 24) jointly connected to ground, and whereof the drains (25, 26) are not polarised. The method consists in applying on the gates (30, 31) of the modulation transistors (21, 22) I or Q modulating analog electric signals, I or Q at low frequency matching each other, whereof the amplitude is less than a maximum value Amax beyond which the power of the signal modulated in output is no longer proportional to the power of the modulating signal.
(FR)
L'invention concerne un procédé et un circuit de modulation analogique en phase et/ou en amplitude d'un signal de porteuse à haute fréquence avec un signal de modulation analogique basse fréquence Î ou Q, comprenant au moins un étage mélangeur (5, 6) comprenant deux transistors à effet de champ identiques, dits transistors de modulation (21, 22), montés avec les sources (23, 24) reliées en commun à la masse, et dont les drains (25, 26) ne sont pas polarisés. On applique sur les grille (30, 31) des transistors de modulation (21, 22) des signaux analogiques modulant I ou Q, I ou Q à basse fréquence complémentaires l'un de l'autre, dont l'amplitude est inférieure à une valeur maximum Amax au-delà de laquelle la puissance du signal modulé en sortie n'est plus proportionnelle à la puissance du signal de modulation.
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