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1. WO2000039860 - INJECTION NON-COHERENT EMITTER

Publication Number WO/2000/039860
Publication Date 06.07.2000
International Application No. PCT/RU1999/000245
International Filing Date 21.07.1999
Chapter 2 Demand Filed 01.06.2000
IPC
H01L 33/08 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
08with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
H01L 27/15 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier, specially adapted for light emission
H01L 33/00 2010.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
CPC
H01L 21/24
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
H01L 27/156
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
15including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
153in a repetitive configuration, e.g. LED bars
156two-dimensional arrays
H01L 33/0045
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0004Devices characterised by their operation
0045the devices being superluminescent diodes
H01L 33/20
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02characterised by the semiconductor bodies
20with a particular shape, e.g. curved or truncated substrate
H01L 33/405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
36characterised by the electrodes
40Materials therefor
405Reflective materials
H01L 33/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
33Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
44characterised by the coatings, e.g. passivation layer or anti-reflective coating
46Reflective coating, e.g. dielectric Bragg reflector
Applicants
  • SHVEIKIN, Vasily Ivanovich [RU/RU]; RU
Inventors
  • SHVEIKIN, Vasily Ivanovich; RU
Agents
  • KURENNAYA, Oxana Nikolaevna; 1-i Neopalimovsky per., 3/10-19 Moscow, 119121, RU
Priority Data
9812324829.12.1998RU
Publication Language Russian (RU)
Filing Language Russian (RU)
Designated States
Title
(EN) INJECTION NON-COHERENT EMITTER
(FR) EMETTEUR NON COHERENT A INJECTION
Abstract
(EN)
The present invention relates to an injection non-coherent emitter that ensures the output of a directed, spontaneous and outflowing radiation at reduced divergence angles with increased external efficiency as well as with increased energetic and luminous power. This emitter includes, in the whole heterostructure (2), a plurality of layers and sublayers having compositions and thicknesses that lay within predetermined ranges, and also includes a plurality of layers for the radiation output area (7). This invention also relates to different modifications in the heterostructure and the output area which allow for the output of the radiation in different controlled directions, including in a direction perpendicular to the active layers of said emitters. This invention further relates to multiple-beam non-coherent emitters, including radiating rulers and matrices having autonomously controlled beams.
(FR)
Cette invention concerne un émetteur non cohérent à injection, lequel assure l'émission d'un rayonnement spontané et dirigé sortant à de faibles angles de divergence, et ceci avec une efficacité externe et une puissance énergétique et lumineuse accrues. Cet émetteur comprend, dans l'ensemble de l'hétérostructure (2), des couches et des sous-couches qui possèdent des compositions et des épaisseurs se trouvant dans des plages données, et comprend également des couches pour la zone d'émission du rayonnement (7). Cette invention concerne également différentes modifications de l'hétérostructure et de la zone d'émission qui permettent d'émettre le rayonnement dans différentes directions contrôlées, y compris dans une direction perpendiculaire à la couche active desdits émetteurs. Cette invention concerne en outre des émetteurs non cohérents à faisceaux multiples, y compris des règles et des matrices rayonnantes dont les faisceaux sont commandés de manière autonome.
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