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1. WO2000039859 - A SWITCH

Publication Number WO/2000/039859
Publication Date 06.07.2000
International Application No. PCT/SE1999/002483
International Filing Date 27.12.1999
Chapter 2 Demand Filed 27.06.2000
IPC
H01L 31/08 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
H01L 31/108 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
108the potential barrier being of the Schottky type
CPC
H01L 31/08
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
H01L 31/1085
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
108the potential barrier being of the Schottky type
1085the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
Applicants
  • ABB AB [SE/SE]; S-721 83 Västerås, SE (AllExceptUS)
  • JOHANSSON, Erik [SE/SE]; SE (UsOnly)
  • SKYTT, Per [SE/SE]; SE (UsOnly)
Inventors
  • JOHANSSON, Erik; SE
  • SKYTT, Per; SE
Agents
  • BJERKÉN, Håkan ; Bjerkéns Patentbyrå KB Box 1274 S-801 37 Gävle, SE
  • OLSSON, Jan ; Bjerkéns Patentbyrå KB P.O. Box 1274 S-801 37 Gävle, SE
Priority Data
9804563-628.12.1998SE
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) A SWITCH
(FR) COMMUTATEUR
Abstract
(EN)
A switch comprises at least a first layer (1) of a first material and two contact electrodes (2, 3) arranged on said first layer on opposite sides thereof and connectable to different potentials for applying a voltage thereacross. A first layer is adapted to be conducting upon applying a voltage across said contact electrodes when exposed to irradiation through an irradiation source (4, 5) of an energy high enough for lifting charge carriers from the valence band to the conduction band of said first material. The contact electrode (2) arranged on the first side (6) of the first layer is laterally displaced with respect to the contact electrode (3) arranged on the opposite second side (7) of the layer with a lateral distance separating them.
(FR)
L'invention concerne un commutateur qui comporte au moins une première couche (1) d'un premier matériau et deux électrodes de contact (2, 3) disposées sur les côtés opposés de la première couche et pouvant être connectées à différents potentiels, de façon à pouvoir appliquer une tension entre ces électrodes. Une première couche est adaptée de façon à être conductrice par application d'une tension entre lesdites électrodes, lorsqu'elle est exposée au rayonnement, à partir d'une source de rayonnement (4, 5), d'une énergie suffisamment importante pour transporter des porteurs de charge de la bande de valence à la bande de conduction dudit premier matériau. L'électrode de contact (2) disposée sur le premier côté (6) de la première couche est déplacée latéralement par rapport à la seconde électrode de contact (3) disposée sur le côté opposé (7) de cette couche, ces électrodes étant espacées latéralement.
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