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1. WO2000039858 - METAL GATE DOUBLE DIFFUSION MOSFET WITH IMPROVED SWITCHING SPEED AND REDUCED GATE TUNNEL LEAKAGE

Publication Number WO/2000/039858
Publication Date 06.07.2000
International Application No. PCT/US1999/029423
International Filing Date 10.12.1999
Chapter 2 Demand Filed 19.07.2000
IPC
H01L 21/336 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
H01L 29/49 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
H01L 29/78 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 29/495
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
495the conductor material next to the insulator being a simple metal, e.g. W, Mo
H01L 29/66545
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66545using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
H01L 29/66712
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
66007Multistep manufacturing processes
66075of devices having semiconductor bodies comprising group 14 or group 13/15 materials
66227the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
66409Unipolar field-effect transistors
66477with an insulated gate, i.e. MISFET
66674DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
66712Vertical DMOS transistors, i.e. VDMOS transistors
H01L 29/7802
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
76Unipolar devices ; , e.g. field effect transistors
772Field effect transistors
78with field effect produced by an insulated gate
7801DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
7802Vertical DMOS transistors, i.e. VDMOS transistors
Applicants
  • FAIRCHILD SEMICONDUCTOR CORPORATION [US/US]; 333 Western Avenue MS 01-00 South Portland, ME 04106, US (AllExceptUS)
  • CHAU, Duc, Q. [US/US]; US (UsOnly)
  • MO, Brian, S. [CN/US]; US (UsOnly)
Inventors
  • CHAU, Duc, Q.; US
  • MO, Brian, S.; US
Agents
  • SANI, Babak, S. ; Townsend and Townsend and Crew LLP 8th floor Two Embarcadero Center San Francisco, CA 94111-3834, US
Priority Data
09/222,25828.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METAL GATE DOUBLE DIFFUSION MOSFET WITH IMPROVED SWITCHING SPEED AND REDUCED GATE TUNNEL LEAKAGE
(FR) TRANSISTOR MOS A EFFET DE CHAMP A PORTEE ISOLEE, A DOUBLE DIFFUSION ET GRILLE METALLIQUE, A VITESSE DE COMMUTATION ACCRUE ET FUITE DE COURANT TUNNEL DE GRILLE REDUITE
Abstract
(EN)
A double-diffused metal-oxide-semiconductor ('DMOS') field-effect transistor (10) with a metal gate (26). A sacrificial gate layer is patterned to provide a self-aligned source mask. The source regions (20) are thus aligned to the gate (26), and the source diffusion provides a slight overlap (28) for good turn-on characteristics and low leakage. The sacrificial gate layer is capable of withstanding the diffusion temperatures of the DMOS process and is selectively etchable. After the high-temperature processing is completed, the sacrificial gate layer is stripped and a metal gate layer is formed over the substrate, filling the volume left by the stripped sacrificial gate material. In one embodiment, a chemical-mechanical polishing technique is used to planarize the metal gate layer.
(FR)
L'invention concerne un transistor à effet de champ à portée isolée et double diffusion (10), dotée d'une grille métallique (26). Un motif est formé dans une couche de grille sacrificielle, de sorte qu'un masque source autoaligné soit produit. Les régions sources (20) sont ainsi alignées par rapport à la grille (26), et la diffusion de la source induit un léger chevauchement (28) permettant d'assurer des bonnes caractéristiques de mise en circuit et une fuite faible. La couche de grille sacrificielle peut résister aux températures de diffusion du traitement du MOS à double diffusion et MOS) et peut être attaquée sélectivement. Après que le traitement haute température a été réalisé, la couche de grille sacrificielle est éliminée et une couche de grille métallique est formée sur le substrat, par remplissage du volume laissé par la couche de grille sacrificielle éliminée. Dans un mode de réalisation, une technique de polissage mécanico-chimique est utilisée pour la planarisation de la couche de grille métallique.
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