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1. WO2000039847 - METHOD FOR STRUCTURING A SUBSTRATE AND DEVICE FOR CARRYING OUT SAID METHOD

Publication Number WO/2000/039847
Publication Date 06.07.2000
International Application No. PCT/DE1999/004025
International Filing Date 17.12.1999
IPC
H01L 21/00 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
H01L 21/311 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
311Etching the insulating layers
H01L 21/3213 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
CPC
H01L 21/31138
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31127Etching organic layers
31133by chemical means
31138by dry-etching
H01L 21/32136
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32133by chemical means only
32135by vapour etching only
32136using plasmas
H01L 21/32139
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
3213Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
32139using masks
H01L 21/67028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
Applicants
  • INFINEON TECHNOLOGIES AG [DE/DE]; St.-Martin-Strasse 53 D-81541 München, DE (AllExceptUS)
  • WEINRICH, Volker [DE/DE]; DE (UsOnly)
  • KREUPL, Franz [DE/DE]; DE (UsOnly)
  • SÄNGER, Annette [DE/DE]; DE (UsOnly)
  • HARTNER, Walter [DE/DE]; DE (UsOnly)
  • ENGELHARDT, Manfred [DE/DE]; DE (UsOnly)
  • SCHIELE, Manuela [DE/DE]; DE (UsOnly)
Inventors
  • WEINRICH, Volker; DE
  • KREUPL, Franz; DE
  • SÄNGER, Annette; DE
  • HARTNER, Walter; DE
  • ENGELHARDT, Manfred; DE
  • SCHIELE, Manuela; DE
Common Representative
  • INFINEON TECHNOLOGIES AG; Zedlitz, Peter Postfach 22 13 17 D-80503 München, DE
Priority Data
198 60 084.423.12.1998DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUM STRUKTURIEREN EINES SUBSTRATS SOWIE VORRICHTUNG ZUR DURCHFÜHRUNG EINES DERARTIGEN VERFAHRENS
(EN) METHOD FOR STRUCTURING A SUBSTRATE AND DEVICE FOR CARRYING OUT SAID METHOD
(FR) PROCEDE POUR STRUCTURER UN SUBSTRAT ET DISPOSITIF POUR METTRE LEDIT PROCEDE EN OEUVRE
Abstract
(DE)
Es wird ein Verfahren zum Strukturieren eines Substrats (20) vorgeschlagen, bei dem nach dem Ätzen des Substrats (20) Ätzrückstände (30) von der Oberfläche des Substrats (20) durch einen Gasstrom (50) entfernt werden. Die Reinigung erfolgt im wesentlichen durch eine Impulsübertragung vom Gasstrom (50) auf die Ätzrückstände (30), die dadurch vom Substrat (20) entfernt werden. Besonders gute Reinigungsergebnisse werden mit einem Gasstrom (50) erreicht, der erstarrte Gaspartikel (45) aufweist. Das Verfahren eignet sich insbesondere zum Strukturieren von Metallschichten (20).
(EN)
The invention relates to a method for structuring a substrate (20). After the substrate (20) has been etched, etching residues (30) are removed from the surface of the substrate (20) by means of a gas stream (50). The cleaning is essentially carried out by means of an impulse transmission from the gas stream (50) to the etching residues (30) which are thereby removed from the substrate (20). Particularly good cleaning results are achieved with a gas stream (50) which is provided with solidified gas particles (45). The method is particularly useful for structuring metal layers (20).
(FR)
L'invention concerne un procédé permettant de structurer un substrat (20), selon lequel après mordançage du substrat (20) les résidus de mordançage (30) sont éliminés de la surface dudit substrat (20) par un courant gazeux (50). Le nettoyage s'effectue sensiblement par transmission d'impulsions du courant gazeux (50) aux résidus de mordançage (30) qui se trouvent ainsi éliminés du substrat (20). On obtient des résultats particulièrement avantageux en matière de nettoyage avec un courant gazeux (50) présentant des particules gazeuses solidifiées. Ce procédé s'utilise notamment pour structurer des couches de métal (20).
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