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1. WO2000039844 - MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME

Publication Number WO/2000/039844
Publication Date 06.07.2000
International Application No. PCT/JP1999/007402
International Filing Date 28.12.1999
Chapter 2 Demand Filed 26.06.2000
IPC
C09G 1/02 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09K 13/00 2006.01
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR APPLICATIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
13Etching, surface-brightening or pickling compositions
C23F 3/00 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACES; INHIBITING CORROSION OF METALLIC MATERIAL; INHIBITING INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25247
3Brightening metals by chemical means
H01L 21/321 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
CPC
C09G 1/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
02containing abrasives or grinding agents
C09G 1/04
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
GPOLISHING COMPOSITIONS OTHER THAN FRENCH POLISH; SKI WAXES
1Polishing compositions
04Aqueous dispersions
C09K 13/00
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
C23F 3/00
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
C23F 3/04
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
04Heavy metals
C23F 3/06
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
3Brightening metals by chemical means
04Heavy metals
06with acidic solutions
Applicants
  • HITACHI CHEMICAL COMPANY, LTD. [JP/JP]; 1-1, Nishishinjuku 2-chome Shinjuku-ku Tokyo 163-0449, JP (AllExceptUS)
  • HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo 100-8220, JP (AllExceptUS)
  • UCHIDA, Takeshi [JP/JP]; JP (UsOnly)
  • HOSHINO, Tetsuya [JP/JP]; JP (UsOnly)
  • TERAZAKI, Hiroki [JP/JP]; JP (UsOnly)
  • KAMIGATA, Yasuo [JP/JP]; JP (UsOnly)
  • KOYAMA, Naoyuki [JP/JP]; JP (UsOnly)
  • HONMA, Yoshio [JP/JP]; JP (UsOnly)
  • KONDOH, Seiichi [JP/JP]; JP (UsOnly)
Inventors
  • UCHIDA, Takeshi; JP
  • HOSHINO, Tetsuya; JP
  • TERAZAKI, Hiroki; JP
  • KAMIGATA, Yasuo; JP
  • KOYAMA, Naoyuki; JP
  • HONMA, Yoshio; JP
  • KONDOH, Seiichi; JP
Agents
  • TOMITA, Kazuko; 7F Yokohama HS-Building 9-10, Kitasaiwai 2-chome Nishi-ku Yokohama-shi Kanagawa 220-0004, JP
Priority Data
10/37260528.12.1998JP
10/37260828.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) MATERIALS FOR POLISHING LIQUID FOR METAL, POLISHING LIQUID FOR METAL, METHOD FOR PREPARATION THEREOF AND POLISHING METHOD USING THE SAME
(FR) MATERIAUX POUR LIQUIDE DE POLISSAGE DE METAL, LIQUIDE DE POLISSAGE DE METAL, PROCEDE DE PREPARATION ET PROCEDE DE POLISSAGE CONNEXES
Abstract
(EN)
A polishing liquid comprising an oxidizing agent, an etching agent for an oxidized metal, an agent capable of forming a protection film, an agent for assisting the dissolution of said agent capable of forming a protection film, a method for preparing the polishing liquid and a polishing method using the liquid. Also provided are materials for a polishing liquid for a metal including an etching agent for an oxidized metal, an agent capable of forming a protection film, and an agent for assisting the dissolution of said agent capable of forming a protection film.
(FR)
L'invention concerne un liquide de polissage comprenant un agent d'oxydation, un agent d'attaque d'un métal oxydé, un agent de formation d'un film de protection, un agent destiné à assister la dissolution de l'agent de formation d'un film de protection, un procédé de préparation du liquide de polissage et un procédé de polissage utilisant ce liquide. Font aussi l'objet de cette invention des matériaux pour un liquide de polissage d'un métal comprenant un agent d'attaque d'un métal oxydé ainsi qu'un agent assistant la dissolution de l'agent de formation d'un film de protection.
Other related publications
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