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1. WO2000039794 - PHASE CHANGE-TYPE OPTICAL RECORDING MEDIUM AND PROCESS FOR MANUFACTURING THE SAME

Publication Number WO/2000/039794
Publication Date 06.07.2000
International Application No. PCT/JP1999/007300
International Filing Date 24.12.1999
Chapter 2 Demand Filed 05.07.2000
IPC
G11B 7/257 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation, reproducing using an optical beam at lower power; Record carriers therefor
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material 
241Record carriers characterised by the selection of the material
252of layers other than recording layers
257of layers having properties involved in recording or reproduction, e.g. optical interference layers, sensitising layers or dielectric layers which are protecting the recording layers
G11B 7/26 2006.01
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation, reproducing using an optical beam at lower power; Record carriers therefor
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material 
26Apparatus or processes specially adapted for the manufacture of record carriers
CPC
G11B 2007/24312
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
242of recording layers
243comprising inorganic materials only, e.g. ablative layers
24302Metals or metalloids
24312group 14 elements (e.g. Si, Ge, Sn)
G11B 2007/24314
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
242of recording layers
243comprising inorganic materials only, e.g. ablative layers
24302Metals or metalloids
24314group 15 elements (e.g. Sb, Bi)
G11B 2007/24316
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
242of recording layers
243comprising inorganic materials only, e.g. ablative layers
24302Metals or metalloids
24316group 16 elements (i.e. chalcogenides, Se, Te)
G11B 2007/25706
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
252of layers other than recording layers
257of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
25705consisting essentially of inorganic materials
25706containing transition metal elements (Zn, Fe, Co, Ni, Pt)
G11B 2007/2571
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
252of layers other than recording layers
257of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
25705consisting essentially of inorganic materials
2571containing group 14 elements except carbon (Si, Ge, Sn, Pb)
G11B 2007/25713
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
7Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation ; by modifying optical properties or the physical structure; , reproducing using an optical beam at lower power ; by sensing optical properties; Record carriers therefor;
24Record carriers characterised by shape, structure or physical properties, or by the selection of the material
241characterised by the selection of the material
252of layers other than recording layers
257of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
25705consisting essentially of inorganic materials
25713containing nitrogen
Applicants
  • TEIJIN LIMITED [JP/JP]; 6-7, Minamihommachi 1-chome Chuo-ku, Osaka-shi Osaka 541-0054, JP (AllExceptUS)
  • TOMIE, Takashi [JP/JP]; JP (UsOnly)
  • EBINA, Atsushi [JP/JP]; JP (UsOnly)
  • IKEDA, Yoshinori [JP/JP]; JP (UsOnly)
Inventors
  • TOMIE, Takashi; JP
  • EBINA, Atsushi; JP
  • IKEDA, Yoshinori; JP
Agents
  • ISHIDA, Takashi ; A. Aoki, Ishida & Associates Toranomon 37 Mori Building 5-1, Toranomon 3-chome Minato-ku Tokyo 105-8423, JP
Priority Data
10/36981025.12.1998JP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) PHASE CHANGE-TYPE OPTICAL RECORDING MEDIUM AND PROCESS FOR MANUFACTURING THE SAME
(FR) SUPPORT D'ENREGISTREMENT OPTIQUE DE TYPE A CHANGEMENT DE PHASE, ET PROCEDE DE FABRICATION DE CE DERNIER
Abstract
(EN)
A phase change-type optical recording medium in which recording of information is made utilizing phase change by light, comprising: a substrate; a first dielectric layer on said substrate; a phase change-type optical recording layer made of GeSbTe wherein the molar ratio of Sb:Te is less than 0.6 on said first dielectric layer; a second dielectric layer on said phase change-type optical recording layer; and a reflective layer either on the second dielectric layer or between said substrate and said first dielectric layer; wherein an intermediate layer is further disposed between said first dielectric layer and said phase change-type optical recording layer and/or between said phase change-type optical recording layer and said second dielectric layer, said intermediate layer being a single layer of Sb2Te3 or GeTe or a laminate layer of Sb2Te3 and GeTe, said intermediate layer being in direct contact with said phase change-type optical recording layer.
(FR)
L'invention concerne un support d'enregistrement optique de type à changement de phase dans lequel l'enregistrement des informations utilise les changements de phase par la lumière. Ce support comprend un substrat, une première couche diélectrique sur ledit substrat, une couche d'enregistrement optique de type à changement de phase constituée de GeSbTe dans laquelle le rapport molaire Sb/Te est inférieur à 0,6 sur ladite première couche diélectrique. Ce support comporte également une deuxième couche diélectrique placée sur ladite couche d'enregistrement optique à changement de phase et une couche de réflection sur la deuxième couche diélectrique ou entre ledit substrat et ladite première couche diélectrique. Une couche intermédiaire est, en outre, placée entre ladite première couche diélectrique et ladite couche d'enregistrement optique de type à changement de phase et/ou entre ladite couche d'enregistrement optique de type à changement de phase et ladite deuxième couche diélectrique. La couche intermédiaire est formée d'une seule couche de Sb2Te3 ou GeTe ou une couche feuilletée de Sb2Te3 et GeTe. En outre, cette couche intermédiaire est en contact direct avec ladite couche d'enregistrement optique de type à changement de phase.
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