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1. WO2000039372 - METHOD FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE

Publication Number WO/2000/039372
Publication Date 06.07.2000
International Application No. PCT/JP1999/007299
International Filing Date 24.12.1999
Chapter 2 Demand Filed 24.01.2000
IPC
C30B 23/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
CPC
C30B 23/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • SHOWA DENKO K. K. [JP/JP]; 13-9, Shiba Daimon 1-chome Minato-ku, Tokyo 105-8518, JP (AllExceptUS)
  • YANO, Kotaro [JP/JP]; JP (UsOnly)
  • YAMAMOTO, Isamu [JP/JP]; JP (UsOnly)
  • SHIGETO, Masashi [JP/JP]; JP (UsOnly)
  • NAGATO, Nobuyuki [JP/JP]; JP (UsOnly)
Inventors
  • YANO, Kotaro; JP
  • YAMAMOTO, Isamu; JP
  • SHIGETO, Masashi; JP
  • NAGATO, Nobuyuki; JP
Agents
  • ISHIDA, Takashi ; A. Aoki, Ishida & Associates Toranomon 37 Mori Building 5-1, Toranomon 3-chome Minato-ku Tokyo 105-8423, JP
Priority Data
10/36856525.12.1998JP
60/115,49711.01.1999US
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD FOR GROWING SINGLE CRYSTAL OF SILICON CARBIDE
(FR) PROCEDE DE PRODUCTION D'UN MONOCRISTAL DE CARBURE DE SILICIUM
Abstract
(EN)
In growing a single crystal (3) of silicon carbide by supplying a silicon carbide-forming gas which has been generated by a method such as heating silicon carbide to sublimation to the front surface of a seed crystal (2), an improvement which comprises adjusting the temperature distribution around the single crystal in a manner such that the temperature gradient from the back of the seed crystal (2) to the lid (8) of a crucible is zero or positive, which leads to preventing or inhibiting the sublimation of silicon carbide from the back of the seed crystal (2); and another improvement which comprises adjusting the temperature distribution in a manner such that the temperature of the inner wall of a vessel for crystal growth around the seed crystal is higher than that of the seed crystal (2), which lead to preventing or inhibiting the growth of polycrystalline silicon carbide which may adversely affect the growth of the single crystal (3).
(FR)
L'invention concerne un procédé permettant de former un monocristal (3) de carbure de silicium en fournissant un gaz de formation de carbure de siliciuménéré par un procédé tel que le chauffage de ce carbure de silicium jusqu'à sublimation de la surface avant d'un cristal germe (2). Une amélioration consiste à ajuster la répartition de la température autour du monocristal de manière à ce que le gradient de température depuis l'arrière du cristal germe (2) jusqu'au couvercle (8) du creuset soit supérieur ou égal à zéro. Ainsi, il est possible de prévenir ou d'inhiber la sublimation du carbure de silicium depuis le dos du cristal germe (2). Une autre amélioration consiste à ajuster la répartition de la température de telle sorte que la température de la paroi intérieure d'une cuve prévue pour la production du cristal autour du cristal germe soit supérieure à celle de ce dernier (2) ce qui empêche ou inhibe la croissance du carbure de silicium polycristallin qui peut avoir un effet défavorable sur la croissance du monocristal (3).
Also published as
US09869196
Latest bibliographic data on file with the International Bureau