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1. WO2000039371 - METHOD OF MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE

Publication Number WO/2000/039371
Publication Date 06.07.2000
International Application No. PCT/JP1999/007298
International Filing Date 24.12.1999
Chapter 2 Demand Filed 24.01.2000
IPC
C30B 23/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 23/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
C30B 25/00 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
C30B 25/02 2006.01
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
02Epitaxial-layer growth
CPC
C30B 23/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
C30B 23/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
C30B 23/025
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
23Single-crystal growth by condensing evaporated or sublimed materials
02Epitaxial-layer growth
025characterised by the substrate
C30B 25/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
C30B 25/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
25Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
02Epitaxial-layer growth
C30B 29/36
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
10Inorganic compounds or compositions
36Carbides
Applicants
  • SHOWA DENKO K. K. [JP/JP]; 13-9, Shiba Daimon 1-chome Minato-ku, Tokyo 105-8518, JP (AllExceptUS)
  • SHIGETO, Masashi [JP/JP]; JP (UsOnly)
  • YANO, Kotaro [JP/JP]; JP (UsOnly)
  • NAGATO, Nobuyuki [JP/JP]; JP (UsOnly)
Inventors
  • SHIGETO, Masashi; JP
  • YANO, Kotaro; JP
  • NAGATO, Nobuyuki; JP
Agents
  • ISHIDA, Takashi ; A. Aoki, Ishida & Associates Toranomon 37 Mori Building 5-1, Toranomon 3-chome Minato-ku Tokyo 105-8423, JP
Priority Data
10/36856625.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF MANUFACTURING SINGLE-CRYSTAL SILICON CARBIDE
(FR) PROCEDE DE FABRICATION DE MONOCRISTAL DE CARBURE DE SILICIUM
Abstract
(EN)
A seed crystal processed by the electrolytic in-process dressing polishing is used to grow single-crystal silicon carbide by transporting gas for silicon carbide formation onto a silicon carbide seed crystal substrate (11). Since the seed crystal includes very little damage or strain, the resulting single-crystal silicon carbide has very few defects such as micro pipes, thus reducing and the manufacturing cost of a semiconductor device.
(FR)
La présente invention concerne un cristal germe, traité au moyen du procédé électrolytique intégré de préparation polissage, utilisé en vue d'obtenir un monocristal de carbure de silicium par transport de gaz destiné à former du carbure de silicium sur un substrat cristal germe (11) de carbure de silicium. En raison du peu de dommages ou de contraintes dans le cristal germe, le monocristal de carbure de silicium résultant comprend très peu de défauts, tels que des micro-conduits, ce qui permet de réduire le coût de fabrication d'un dispositif semi-conducteur.
Also published as
US09869228
Latest bibliographic data on file with the International Bureau