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1. WO2000039355 - METHOD AND DEVICE FOR COATING SUBSTRATES BY MEANS OF BIPOLAR PULSE MAGNETRON SPUTTERING AND THE USE THEREOF

Publication Number WO/2000/039355
Publication Date 06.07.2000
International Application No. PCT/DE1999/004132
International Filing Date 27.12.1999
Chapter 2 Demand Filed 21.07.2000
IPC
C23C 14/35 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
H01J 37/34 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes
34operating with cathodic sputtering
CPC
C23C 14/352
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
35by application of a magnetic field, e.g. magnetron sputtering
352using more than one target
H01J 37/3405
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32Gas-filled discharge tubes, ; e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
34operating with cathodic sputtering
3402using supplementary magnetic fields
3405Magnetron sputtering
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. [DE/DE]; Leonrodstrasse 54 D-80636 München, DE (AllExceptUS)
  • FIETZKE, Fred [DE/DE]; DE (UsOnly)
  • GOEDICKE, Klaus [DE/DE]; DE (UsOnly)
  • SCHILLER, Siegfried [DE/DE]; DE (UsOnly)
Inventors
  • FIETZKE, Fred; DE
  • GOEDICKE, Klaus; DE
  • SCHILLER, Siegfried; DE
Agents
  • PÄTZELT, Peter; Pätzelt-Seltmann-Hofmann Ammonstrasse 72 D-01067 Dresden, DE
Priority Data
198 60 474.228.12.1998DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN UND EINRICHTUNG ZUM BESCHICHTEN VON SUBSTRATEN MITTELS BIPOLARER PULS-MAGNETRON-ZERSTÄUBUNG UND DEREN ANWENDUNG
(EN) METHOD AND DEVICE FOR COATING SUBSTRATES BY MEANS OF BIPOLAR PULSE MAGNETRON SPUTTERING AND THE USE THEREOF
(FR) PROCEDE ET DISPOSITIF PERMETTANT DE RECOUVRIR DES SUBSTRATS PAR PULVERISATION MAGNETRON A IMPULSIONS BIPOLAIRES ET LEUR UTILISATION
Abstract
(DE)
Die Erfindung betrifft ein Verfahren und eine Einrichtung zum Beschichten von Substraten mittels bipolarer Puls-Magnetron-Zerstäubung mit drei oder mehr Targets. Die Substrate werden gegenüber den Targets im wesentlichen im Bereich hoher Plasmadichte angeordnet, wobei jeweils mindestens zwei Targets mit einer potentialfreien bipolaren Stromversorgungseinrichtung verbunden und für eine vorgegebene Zeit bipolar zerstäubt werden und die Auswahl der jeweils mit der bipolaren Stromversorgungseinrichtung verbundenen Targets im Verlauf des Beschichtungsvorganges nach einem technologisch vorgegebenen Programm geändert wird. Die Einrichtung besteht aus mindestens drei Magnetronquellen (17, 17', 17'') mit Targets (18, 18', 18''), einer potentialfreien bipolaren Stromversorgungseinrichtung (21) und einer Umschalteinrichtung (20) zur Umschaltung der aktuellen elektrischen Verbindung ausgewählter Targets mit der bipolaren Stromversorgungseinrichtung (21) nach einem technologisch vorgegebenen Programm.
(EN)
The invention relates to a method and device for coating substrates by means of bipolar pulse magnetron sputtering using three or more targets. The substrates are placed opposite the targets essentially in the range of a high plasma density, whereby at least two targets are connected to a potential-free bipolar power supply device and are sputtered for a predetermined period of time. The selection of the target respectively connected to the bipolar power supply device is altered during the course of the coating process according to a technologically predetermined program. The device is comprised of at least three magnetron sources (17, 17', 17'') provided with targets (18, 18', 18''), of a potential-free bipolar power supply device (21), and of a switching device (20) for switching the current electrical connection of selected targets with the bipolar power supply device (21) according to a technologically predetermined program.
(FR)
L'invention concerne un procédé et un dispositif qui permettent de recouvrir des substrats par pulvérisation magnétron à impulsions bipolaires au moyen de trois cibles ou davantage. Les substrats sont placés en face des cibles dans une zone ayant une densité de plasma relativement élevée. Au moins deux cibles, reliées à un dispositif d'alimentation en courant bipolaire neutre, effectuent une pulvérisation bipolaire durant un temps prédéterminé. La connexion et la déconnexion des différentes cibles à ladite alimentation durant l'opération de pulvérisation se fait en fonction d'un programme techniquement prédéterminé. Le dispositif comprend au moins trois sources magnétron (17, 17', 17'') pourvues de cibles (18, 18', 18''); un dispositif d'alimentation en courant bipolaire neutre (21); et un dispositif de commutation (20), qui commute la connexion électrique de la cible sélectionnée avec l'alimentation (21) d'après un programme techniquement défini.
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