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1. WO2000039028 - MESOPOROUS SILICA FILM FROM A SOLUTION CONTAINING A SURFACTANT AND METHODS OF MAKING SAME

Publication Number WO/2000/039028
Publication Date 06.07.2000
International Application No. PCT/US1999/030655
International Filing Date 23.12.1999
Chapter 2 Demand Filed 12.07.2000
IPC
C01B 37/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF
37Compounds having molecular sieve properties but not having base-exchange properties
02Crystalline silica-polymorphs, e.g. silicalites
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
C01B 37/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; ; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
37Compounds having molecular sieve properties but not having base-exchange properties
02Crystalline silica-polymorphs, e.g. silicalites ; dealuminated aluminosilicate zeolites
H01L 21/02164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02164the material being a silicon oxide, e.g. SiO2
H01L 21/02203
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02203the layer being porous
H01L 21/02211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02211the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
H01L 21/31695
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
31695Deposition of porous oxides or porous glassy oxides or oxide based porous glass
Applicants
  • BATTELLE MEMORIAL INSTITUTE [US/US]; Pacific Northwest Division P.O. Box 999 Richland, WA 99352, US (AllExceptUS)
  • DOMANSKY, Karel [CZ/US]; US (UsOnly)
  • FRYXELL, Glen, E. [US/US]; US (UsOnly)
  • LIU, Jun [CN/US]; US (UsOnly)
  • KOHLER, Nathan, J. [US/US]; US (UsOnly)
  • BASKARAN, Suresh [IN/US]; US (UsOnly)
  • LI, Xiaohong [CN/US]; US (UsOnly)
  • THEVUTHASAN, Suntharampillai [LK/US]; US (UsOnly)
  • COYLE, Christopher, A. [US/US]; US (UsOnly)
  • BIRNBAUM, Jerome, C. [US/US]; US (UsOnly)
Inventors
  • DOMANSKY, Karel; US
  • FRYXELL, Glen, E.; US
  • LIU, Jun; US
  • KOHLER, Nathan, J.; US
  • BASKARAN, Suresh; US
  • LI, Xiaohong; US
  • THEVUTHASAN, Suntharampillai; US
  • COYLE, Christopher, A.; US
  • BIRNBAUM, Jerome, C.; US
Agents
  • STEWART, James, G. ; Marger Johnson & McCollom 1030 SW Morrison St. Portland, OR 97205, US
Priority Data
09/220,88223.12.1998US
09/222,56928.12.1998US
09/335,21017.06.1999US
09/361,49923.07.1999US
09/413,06204.10.1999US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) MESOPOROUS SILICA FILM FROM A SOLUTION CONTAINING A SURFACTANT AND METHODS OF MAKING SAME
(FR) FILM DE SILICE MESOPOREUSE ISSU D'UNE SOLUTION CONTENANT UN TENSIOACTIF ET PROCEDES DE FABRICATION CORRESPONDANTS
Abstract
(EN)
The present invention is a mesoporous silica film having a low dielectric constant and method of making having the steps of combining a surfactant in a silica precursor solution, spin-coating a film from this solution mixture, forming a partially hydroxylated mesoporous film, and dehydroxylating the hydroxylated film to obtain the mesoporous film. It is advantageous that the small polyoxyethylene ether surfactants used in spin-coated films as described in the present invention will result in fine pores smaller on average than about 20 nm. The resulting mesoporous film has a dielectric constant less than 3, which is stable in moist air with a specific humidity. The present invention provides a method for superior control of film thickness and thickness uniformity over a coated wafer, and films with low dielectric constant. The present invention is a method of dehydroxylating a silica surface that is hydroxylated having the steps of exposing the silica surface separately to a silicon organic compound and a dehydroxylating gas. Exposure to the silicon organic compound can be in liquid, gas or solution phase, and exposure to a dehydroxylating gas is typically at elevated temperatures. In one embodiment, the improvement of the dehydroxylation procedure is the repetition of the soaking and dehydroxylating gas exposure. In another embodiment, the improvement is the use of an inert gas that is substantially free of hydrogen. In yet another embodiment, the present invention is the combination of the two-step dehydroxylation method with a surfactant templating method of making a mesoporous film.
(FR)
L'invention concerne un film en silice mésoporeuse à faible constante diélectrique ainsi qu'un procédé de fabrication de ce film. Ce procédé consiste à combiner un tensioactif dans une solution précurseur, à enduire par centrifugation un film de ce mélange en solution, à former un film mésoporeux partiellement hydroxylé, enfin à déshydroxyler ce film afin d'obtenir le film mésoporeux. D'une manière avantageuse, les petits tensioactifs d'éther de polyoxyéthylène utilisés dans les films enduits par centrifugation selon l'invention permettent d'obtenir des pores fins inférieurs en moyenne à environ 20 nm. Le film mésoporeux ainsi obtenu présente une constante diélectrique inférieure à 3 qui est stable dans l'air présentant une humidité spécifique. L'invention concerne également un procédé de contrôle amélioré de l'épaisseur des films et de l'uniformité de l'épaisseur d'un film recouvrant une tranche ainsi que des films à faible constante diélectrique. L'invention concerne en outre un procédé de déshydroxylation d'une surface en silice hydroxylée. Ce procédé consiste à exposer cette surface en silice séparément à un composé organique de silicium et à un gaz de déshydroxylation. L'exposition au composé organique de silicium peut se faire sous forme de phase liquide, gazeuse ou en solution tandis que l'exposition au gaz de déshydroxylation se fait généralement à des températures élevées. Dans un mode de réalisation, l'amélioration du procédé de déshydroxylation consiste à répéter le trempage et l'exposition au gaz de déshydroxylation. Dans un autre mode de réalisation, l'amélioration consiste à utiliser un gaz inerte sensiblement dépourvu d'hydrogène. Dans un autre mode de réalisation, l'invention concerne la combinaison du procédé de déshydroxylation en deux étapes et d'un procédé de fabrication d'un film mésoporeux par structuration au tensioactif.
Also published as
ININ/PCT/2001/00586/DEL
Latest bibliographic data on file with the International Bureau