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1. WO2000038862 - METHOD OF PRODUCING A SILICOM/ALUMINUM SPUTTERING TARGET

Publication Number WO/2000/038862
Publication Date 06.07.2000
International Application No. PCT/US1999/030949
International Filing Date 22.12.1999
Chapter 2 Demand Filed 14.07.2000
IPC
B22F 5/00 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
5Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
C22C 29/18 2006.01
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
29Alloys based on carbides, oxides, borides, nitrides or silicides, e.g. cermets, or other metal compounds, e. g. oxynitrides, sulfides
18based on silicides
C23C 14/14 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
C23C 14/34 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
CPC
B22F 2998/00
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2998Supplementary information concerning processes or compositions relating to powder metallurgy
B22F 2998/10
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2998Supplementary information concerning processes or compositions relating to powder metallurgy
10Processes characterised by the sequence of their steps
B22F 2999/00
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
2999Aspects linked to processes or compositions used in powder metallurgy
B22F 5/00
BPERFORMING OPERATIONS; TRANSPORTING
22CASTING; POWDER METALLURGY
FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER
5Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
C22C 29/18
CCHEMISTRY; METALLURGY
22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
CALLOYS
29Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
18based on silicides
C23C 14/14
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
06characterised by the coating material
14Metallic material, boron or silicon
Applicants
  • ULTRACLAD CORPORATION [US/US]; 155 River Street Andover, MA 01810, US
Inventors
  • RUNKLE, Joseph, C.; US
Agents
  • DURKEE, Paul, D. ; Nutter, McClennen & Fish, LLP One International Place Boston, MA 02110-2699, US
Priority Data
60/113,92028.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF PRODUCING A SILICOM/ALUMINUM SPUTTERING TARGET
(FR) PROCEDE DE FABRICATION D'UNE CIBLE DE PULVERISATION EN SILICIUM/VANADIUM
Abstract
(EN)
A method of producing a silicon aluminum sputtering target is provided. The target is formed (10) from a base powder of between about 80 % to about 95 % by weight silicon and about 5 % to about 20 % by weight aluminum which is placed (20) in a containment unit, heated under vacuum and then sealed. The base is then subjected (30) to a pressure greater than about 3000 psi and heated to a temperature between about 1076°F and about 1652°F such that some, but not more than 30 %, of the resulting target is formed from liquid phase silicon-aluminum.
(FR)
L'invention se rapporte à un procédé de fabrication d'une cible de pulvérisation en silicium/vanadium. Ladite cible est formée (10) à partir d'une poudre de base comportant 80 % environ à 95 % environ en poids de silicium et 5 % environ à 20 % environ en poids d'aluminium. Cette poudre de base est placée (20) dans une unité de confinement chauffée sous vide puis scellée. La poudre est alors soumise (30) à une pression supérieure à 3000 psi environ et elle est chauffée à une température comprise entre 1076°F environ et 1652°F environ, de sorte qu'une partie de la cible résultante, qui ne représente pas plus de 30 % de la cible totale, est formée à partir du mélange silicium-aluminium en phase liquide.
Also published as
Latest bibliographic data on file with the International Bureau