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1. WO2000037217 - METHOD FOR CLEANING AN ABRASIVE SURFACE

Publication Number WO/2000/037217
Publication Date 29.06.2000
International Application No. PCT/US1999/028816
International Filing Date 03.12.1999
Chapter 2 Demand Filed 29.06.2000
IPC
B24B 53/007 2006.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
53Devices or means for dressing or conditioning abrasive surfaces
007Cleaning of grinding wheels
B24B 53/017 2012.01
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
53Devices or means for dressing or conditioning abrasive surfaces
017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
H01L 21/321 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers, on insulating layers; After-treatment of these layers
321After-treatment
CPC
B24B 53/017
BPERFORMING OPERATIONS; TRANSPORTING
24GRINDING; POLISHING
BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
53Devices or means for dressing or conditioning abrasive surfaces
017Devices or means for dressing, cleaning or otherwise conditioning lapping tools
H01L 21/3212
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3205Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
321After treatment
32115Planarisation
3212by chemical mechanical polishing [CMP]
Applicants
  • LAM RESEARCH CORPORATION [US]/[US] (AllExceptUS)
  • BAJAJ, Rajeev [IN]/[US] (UsOnly)
  • WITHERS, Bradley [US]/[US] (UsOnly)
  • SURANA, Rahul [IN]/[US] (UsOnly)
  • JEW, Stephen [US]/[US] (UsOnly)
  • KRUSELL, Wilbur, C. [US]/[US] (UsOnly)
Inventors
  • BAJAJ, Rajeev
  • WITHERS, Bradley
  • SURANA, Rahul
  • JEW, Stephen
  • KRUSELL, Wilbur, C.
Agents
  • DOCKREY, Jasper, W.
Priority Data
09/218,80421.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD FOR CLEANING AN ABRASIVE SURFACE
(FR) PROCEDE DE NETTOYAGE D'UNE SURFACE ABRASIVE
Abstract
(EN)
A method of cleaning an abrasive surface, such as a polishing pad in a chemical-mechanical-polishing apparatus, includes the application of an acidic cleaning solution to the abrasive surface, while applying an abrasive force to the abrasive surface for the removal of reaction by-products and processing debris from the abrasive surface. The acidic cleaning solution chemically reacts with the reaction by-products, and in conjunction with the abrasive force, removed the reaction by-products from the abrasive surface. In a preferred embodiment, a polishing pad used to remove copper from a semiconductor substrate is cleaned by applying a dilute hydrochloric acid solution to the polishing pad, while rotating a cleaning disk against the polishing pad.
(FR)
L'invention porte sur un procédé de nettoyage d'une surface abrasive telle qu'un tampon à polir dans un appareil de polissage chimique-mécanique. Ce procédé consiste à appliquer une solution de nettoyage acide sur la surface abrasive, une force abrasive s'exerçant également sur cette surface abrasive pour retirer des sous-produits de réaction et traiter des débris provenant de cette surface abrasive. La solution de nettoyage acide réagit chimiquement aux sous-produits de réaction et, en concomitance avec la force abrasive, retire les sous-produits de réaction de la surface abrasive. Selon une réalisation préférée, un tampon à polir, utilisé pour retirer le cuivre d'un substrat semi-conducteur, est nettoyé avec une solution d'acide chlorhydrique dilué au moyen d'un disque de nettoyage qui se déplace par rotation contre la surface du tampon à polir.
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