Processing

Please wait...

Settings

Settings

Goto Application

1. WO2000036712 - LASER OUTPUT DEVICE AND RELATED METHOD

Publication Number WO/2000/036712
Publication Date 22.06.2000
International Application No. PCT/US1999/029293
International Filing Date 10.12.1999
Chapter 2 Demand Filed 12.07.2000
IPC
H01S 5/028 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings
H01S 5/183 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
CPC
H01S 5/0207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
0206Substrates, e.g. growth, shape, material, removal or bonding;
0207Substrates having a special shape
H01S 5/0285
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
02Structural details or components not essential to laser action
028Coatings ; ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
0285Coatings with a controllable reflectivity
H01S 5/04253
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04252characterised by the material
04253having specific optical properties, e.g. transparent electrodes
H01S 5/04254
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
04Processes or apparatus for excitation, e.g. pumping, ; e.g. by electron beams
042Electrical excitation ; ; Circuits therefor
0425Electrodes, e.g. characterised by the structure
04254characterised by the shape
H01S 5/0614
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
0607by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
0614controlled by electric field, i.e. whereby an additional electric field is used to tune the bandgap, e.g. using the Stark-effect
H01S 5/18305
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
183having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
18305with emission through the substrate, i.e. bottom emission
Applicants
  • TERACOMM RESEARCH, INC. [US]/[US]
Inventors
  • PUZEY, Kenneth, A.
Agents
  • GALLENSON, Mavis, S.
Priority Data
09/210,93115.12.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) LASER OUTPUT DEVICE AND RELATED METHOD
(FR) DISPOSITIF DE LASER
Abstract
(EN)
Output for a laser is greatly increased by altering the transmitivity of a superconductor layer which serves as one of the mirrors of the laser cavity. The superconductor layer is switched between a superconductive state, having reflectivity of one, and a non-superconductive state, having a reflectivity of less than one. When the mirror is in its superconducting state, output power is decreased and power in the cavity is increased, and when the mirror is in its non-superconducting state, output power of the laser is increased and power in the cavity decreases.
(FR)
Il est possible d'augmenter considérablement la sortie d'un laser en modifiant la transmissivité d'une couche à supraconducteur constituant l'un des miroirs de la cavité laser. Cette couche à supraconducteur peut passer d'un état supraconducteur, dans lequel elle présente un pouvoir réflecteur égal à un, à un état non supraconducteur, dans lequel elle présente un pouvoir réflecteur inférieur à un. Une fois le miroir dans son état supraconducteur, la puissance de sortie diminue et la puissance de la cavité augmente, alors que lorsque ce miroir se trouve dans son état non supraconducteur, la puissance de sortie du laser augmente et celle de la cavité diminue.
Also published as
Latest bibliographic data on file with the International Bureau