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1. WO2000033980 - SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES

Publication Number WO/2000/033980
Publication Date 15.06.2000
International Application No. PCT/US1999/028610
International Filing Date 03.12.1999
Chapter 2 Demand Filed 07.07.2000
IPC
H01L 21/00 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
CPC
H01L 21/67028
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
Y10S 134/902
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
134Cleaning and liquid contact with solids
902Semiconductor wafer
Applicants
  • KITTLE, Paul, A. [US]/[US]
Inventors
  • KITTLE, Paul, A.
Agents
  • SMITH, George, A., Jr.
Priority Data
09/208,11209.12.1998US
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) SURFACE TREATMENT OF SEMICONDUCTOR SUBSTRATES
(FR) TRAITEMENT DE SURFACES DE SUBSTRATS A SEMICONDUCTEURS
Abstract
(EN) Surface cleaning, chemical treatment and drying of semiconductor substrates is carried out using foam as a medium instead of a condensed phase liquid medium. In an overflow vessel the foam is caused to pass over the substrate (24) in moving contact therewith. Drying of the substrate is carried out, using a water solution of carbon dioxide in a pressurizable vessel. By releasing the pressure in the vessel, a layer of foam is established on the surface of the solution. The solution is discharged from the vessel, causing the foam layer (108) to pass over the substrate (24) in moving contact therewith. The carbon dioxide reduces the surface tension of the water, thereby enabling the foam layer (108) to be produced and also assisting in the elimination of water from the surface of the substrate. In both cases, the use of foam (108) reduces materials requirements and also reduces the quantity of particles deposited onto the substrate (24) in the treatment process.
(FR) La présente invention concerne le nettoyage de surface, le traitement chimique et le séchage de substrats à semiconducteurs, effectués en utilisant la mousse comme milieu au lieu d'un milieu liquide en phase condensée. Dans une cuve de trop-plein, la mousse est amenée à traverser le substrat (24) dans un contact de déplacement. Le séchage du substrat s'effectue en utilisant une solution aqueuse de gaz carbonique dans une cuve pressurisable. En relâchant la pression dans la cuve, une couche de mousse se forme sur la surface de la solution. Cette solution est déchargée de la cuve, amenant la couche de mousse (108) à traverser le substrat (24) dans un contact de déplacement. Le gaz carbonique réduit la tension de surface de l'eau, ce qui permet d'obtenir une couche de mousse (108) et de faciliter l'élimination de l'eau de la surface du substrat. Dans les deux cas, l'utilisation de mousse (108) réduit les besoins en matériaux et réduit également la quantité de particules déposées sur le substrat (24) lors du processus de traitement.
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