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1. WO2000033361 - METHOD OF FABRICATION OF A FERRO-ELECTRIC CAPACITOR AND METHOD OF GROWING A PZT LAYER ON A SUBSTRATE

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Publication Number WO/2000/033361
Publication Date 08.06.2000
International Application No. PCT/BE1999/000155
International Filing Date 30.11.1999
Chapter 2 Demand Filed 29.05.2000
IPC
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
H01L 21/316 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
H01G 4/1218
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
018Dielectrics
06Solid dielectrics
08Inorganic dielectrics
12Ceramic dielectrics
1209characterised by the ceramic dielectric material
1218based on titanium oxides or titanates
H01G 4/1245
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
4Fixed capacitors; Processes of their manufacture
002Details
018Dielectrics
06Solid dielectrics
08Inorganic dielectrics
12Ceramic dielectrics
1209characterised by the ceramic dielectric material
1236based on zirconium oxides or zirconates
1245containing also titanates
H01L 21/02197
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02197the material having a perovskite structure, e.g. BaTiO3
H01L 21/02266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02266deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
H01L 21/31691
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
314Inorganic layers
316composed of oxides or glassy oxides or oxide based glass
31691with perovskite structure
H01L 28/55
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
55with a dielectric comprising a perovskite structure material
Applicants
  • INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM [BE]/[BE] (AllExceptUS)
  • WOUTERS, Dirk [BE]/[BE] (AllExceptUS)
  • NORGA, Gerd [BE]/[BE] (UsOnly)
Inventors
  • NORGA, Gerd
Agents
  • VAN MALDEREN, Joëlle
Priority Data
60/110,27630.11.1998US
99870224.526.10.1999EP
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHOD OF FABRICATION OF A FERRO-ELECTRIC CAPACITOR AND METHOD OF GROWING A PZT LAYER ON A SUBSTRATE
(FR) PROCEDE DE FABRICATION D'UN CONDENSATEUR FERROELECTRIQUE ET PROCEDE DE FORMATION D'UNE COUCHE EN PZT SUR UN SUBSTRAT
front page image
Abstract
(EN)
The present invention is related to a method, wherein a PZT layer (35) comprises a first PZT sub-layer and a second PZT sub-layer, the Ti-concentration of the first PZT sub-layer being higher than the Ti-concentration of the second PZT sub-layer.
(FR)
L'invention concerne un procédé, dans lequel une couche (35) en PZT comprend une première et une seconde sous-couches en PZT, la teneur en Ti de la première sous-couche étant supérieure à celle de la seconde sous-couche.
Also published as
AU2000015399
EP1145293
JP2002531943
US20030133250
US6545856
Latest bibliographic data on file with the International Bureau
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