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1. WO2000032516 - METHOD OF PRODUCING INORGANIC COMPOUND SOLID SUBSTANCE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

Publication Number WO/2000/032516
Publication Date 08.06.2000
International Application No. PCT/JP1999/006524
International Filing Date 22.11.1999
Chapter 2 Demand Filed 10.04.2000
IPC
C01G 1/02 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
1Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, C01F145
02Oxides
C01G 25/00 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
25Compounds of zirconium
C01G 35/00 2006.01
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F94
35Compounds of tantalum
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/3105 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
3105After-treatment
H01L 21/314 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
CPC
C01G 1/02
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
1Methods of preparing compounds of metals not covered by subclasses C01B, C01C, C01D, or C01F, in general
02Oxides
C01G 25/006
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
25Compounds of zirconium
006Compounds containing, besides zirconium, two or more other elements, with the exception of oxygen or hydrogen
C01G 35/006
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
35Compounds of tantalum
006Compounds containing, besides tantalum, two or more other elements, with the exception of oxygen or hydrogen
C01P 2004/80
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2004Particle morphology
80Particles consisting of a mixture of two or more inorganic phases
C01P 2006/40
CCHEMISTRY; METALLURGY
01INORGANIC CHEMISTRY
PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
2006Physical properties of inorganic compounds
40Electric properties
C23C 18/143
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
18Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
14Decomposition by irradiation, e.g. photolysis, particle radiation ; or by mixed irradiation sources
143Radiation by light, e.g. photolysis or pyrolysis
Applicants
  • ROHM CO., LTD. [JP]/[JP] (AllExceptUS)
  • NAKAMURA, Takashi [JP]/[JP] (UsOnly)
  • FUJIMORI, Yoshikazu [JP]/[JP] (UsOnly)
Inventors
  • NAKAMURA, Takashi
  • FUJIMORI, Yoshikazu
Agents
  • KAMEI, Hirokatsu
Priority Data
10/33732327.11.1998JP
10/37080725.12.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) METHOD OF PRODUCING INORGANIC COMPOUND SOLID SUBSTANCE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
(FR) PRODUCTION DE SUBSTANCE SOLIDE A BASE DE COMPOSE INORGANIQUE ET FABRICATION DE SEMI-CONDUCTEUR
Abstract
(EN)
A method for producing an excellent inorganic compound solid substance (such as ferroelectric film) by heat treatment at a relatively low temperature by using an organic compound material containing a metallic element. To form a ferroelectric film, a solution of an organic compound material containing a metallic element is applied to a semiconductor substrate (S41), the substrate is dried (S42) and preliminarily baked (S43), the steps are repeated until the thickness of the film formed on the substrate reaches a predetermined value, organic substances are removed by, for example, a heat treatment (at about 550°C) in a low-pressure atmosphere (at about 50 Torr) (S45), the inorganic compound material obtained by the organic substance removal is baked at, for example, about 550°C to crystallize the organic compound material (S46).
(FR)
La présente invention concerne un procédé permettant de produire une excellente substance solide à base de composé inorganique (telle qu'un film ferroélectrique) par traitement thermique à relativement basse en utilisant un matériau composé organique contenant un élément métallique. Pour former un film ferroélectrique, une solution d'un matériau composé organique contenant un élément métallique est appliquée à un substrat semi-conducteur (S41). Le substrat est séché (S42) et séché en première intention (S43). Les opérations se répètent jusqu'à ce que l'épaisseur du film formé sur le substrat atteigne une valeur définie. Des substances organiques sont éliminées notamment par traitement thermique (à environ 550°C) dans une atmosphère à basse pression (à environ 50 Torr) (S45). Le matériau à base de composé inorganique obtenu par élimination de substance organique est cuit notamment à une température d'environ 550°C de façon à cristalliser le matériau à base de composé inorganique (S46).
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