WIPO logo
Mobile | Deutsch | Español | Français | 日本語 | 한국어 | Português | Русский | 中文 | العربية |
PATENTSCOPE

Search International and National Patent Collections
World Intellectual Property Organization
Search
 
Browse
 
Translate
 
Options
 
News
 
Login
 
Help
 
Machine translation
1. (WO2000030154) METHOD TO CONTROL FILM REMOVAL RATES FOR IMPROVED POLISHING IN METAL CMP
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/030154    International Application No.:    PCT/US1999/027092
Publication Date: 25.05.2000 International Filing Date: 15.11.1999
Chapter 2 Demand Filed:    13.06.2000    
IPC:
H01L 21/3105 (2006.01), H01L 21/321 (2006.01)
Applicants: RODEL HOLDINGS, INC. [US/US]; Suite 1300, 1105 North Market Street, Wilmington, DE 19899 (US)
Inventors: SENOO, Hiroyuki; (JP).
YOSHIDA, Kouchi; (JP).
NISHIDA, Yoshikazu; (JP).
SACHAN, Vikas; (US).
LACK, Craig, D.; (US).
KOINKAR, Vilas, N.; (US).
LAVOIE, Raymond, Lee, Jr.; (US).
BURKE, Peter, A.; (US)
Agent: BENSON, Kenneth, A.; Rodel Holdings, Inc., Suite 1300, 1105 North Market Street, Wilmington, DE 19899 (US)
Priority Data:
60/108,656 16.11.1998 US
Title (EN) METHOD TO CONTROL FILM REMOVAL RATES FOR IMPROVED POLISHING IN METAL CMP
(FR) METHODE DESTINEE A MAITRISER LES VITESSES D'ELIMINATION DE FILMS EN POLISSAGE MECANICO-CHIMIQUE AMELIORE DE METAUX
Abstract: front page image
(EN)A composition useful for a second step planarization of a metal, barrier layer, and a dielectric insulating layer structure is provided which comprises: water, colloidal silica particles with a primary particle size between 10 and 100 nanometers and a surface area of 20 to 600 m?2¿/g, and an oxidizing agent.
(FR)La présente invention concerne une composition utile dans la seconde étape de planarisation d'un métal, d'une couche barrière, et d'une structure d'isolant diélectrique. Cette composition comprend de l'eau, des particules de silice colloïdale, de granulométrie primaire comprise entre 10 et 100 nanomètres, présentant une aire de surface de 20 à 600 m?2¿/g, et un agent oxydant.
Designated States: CN, JP, KR, SG.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)