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1. WO2000028603 - TEXTURING OF GLASS BY SiO¿2? FILM

Publication Number WO/2000/028603
Publication Date 18.05.2000
International Application No. PCT/AU1999/000980
International Filing Date 08.11.1999
Chapter 2 Demand Filed 26.05.2000
IPC
H01L 31/0236 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
H01L 31/0392 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
036characterised by their crystalline structure or particular orientation of the crystalline planes
0392including thin films deposited on metallic or insulating substrates
H01L 31/052 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
052Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
CPC
C03C 17/3636
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3636one layer at least containing silicon, hydrogenated silicon or a silicide
C03C 17/3642
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3642the multilayer coating containing a metal layer
C03C 17/3678
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
17Surface treatment of glass, not in the form of fibres or filaments, by coating
34with at least two coatings having different compositions
36at least one coating being a metal
3602the metal being present as a layer
3668the multilayer coating having electrical properties
3678specially adapted for use in solar cells
C03C 2217/73
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2217Coatings on glass
70Properties of coatings
73Anti-reflective coatings with specific characteristics
C03C 2218/31
CCHEMISTRY; METALLURGY
03GLASS; MINERAL OR SLAG WOOL
CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
2218Methods for coating glass
30Aspects of methods for coating glass not covered above
31Pre-treatment
H01L 31/0236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0236Special surface textures
Applicants
  • PACIFIC SOLAR PTY. LIMITED [AU]/[AU] (AllExceptUS)
  • JI, Jing, Jia [AU]/[AU] (UsOnly)
  • SHI, Zhengrong [AU]/[AU] (UsOnly)
Inventors
  • JI, Jing, Jia
  • SHI, Zhengrong
Agents
  • F B RICE & CO
Priority Data
PP 699706.11.1998AU
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) TEXTURING OF GLASS BY SiO2 FILM
(FR) TEXTURATION DE VERRE A L'AIDE D'UN FILM DE SiO2
Abstract
(EN)
A thin film silicon solar cell is formed on a glass substrate (11) which has a texturing layer (32) applied comprising an SiO2 film (33) mixed with texturing particles (34) having diameters in the order of 1-2 $g(m)m whereby a textured surface (39) is formed. The SiO2 film is thinner than the average diameter of the texturing particles such that the quartz projects through the spin-on glass. The dielectric layer in this case provides a barrier layer function, however, a separate anti-reflection coating (38) may optionally be employed, having an upper surface (35) which is conformal with the textured surface (39). As illustrated in the Figure, a silicon film (15) is then formed over the textured surface (35) of the anti-reflection coating (38). The silicon film has a thickness preferably in the range of 0.5-2 $g(m)m (i.e., of similar thickness to the dimensions of the texture features provided on the surface of the SiO2 layer). Although the silicon film produced by this method loosely conforms to the textured surface over which it is formed, the opposite surfaces of the film are substantially non-parallel, at least on a small scale such that light will generally traverse the silicon film at an angle to the silicon surface. More importantly, the light will more often than not strike the rear surface of the silicon film (upper surface, in the Figure) at a significant angle to the normal to the surface (36), such that for a significant number of incidences, total internal reflection will occur. The surface (36) may also be coated with a reflective material (40) (such as a rear metal contact) to assist in reflecting internal light striking this surface.
(FR)
Cellule solaire à film mince de silicium qui est formée sur un substrat (11) en verre sur lequel est appliquée une couche de texturation (32) comportant un film de SiO2 (33) mélangé à des particules de texturation (34) ayant un diamètre de l'ordre de 1-2 $g(m)m, ce qui permet d'obtenir une surface texturée (39). Le film de SiO2 est plus mince que le diamètre moyen des particules de texturation, de sorte que le quartz fait saillie à travers la couche diélectrique de SiO2. La couche diélectrique constitue en l'occurrence une couche barrière, mais un revêtement antireflet séparé (38) peut éventuellement être employé, ledit revêtement ayant une surface supérieure (35) qui épouse la forme de la surface texturée (39). Comme l'illustre la figure, un film de silicium (15) est ensuite formé sur la surface texturée (35) du revêtement antireflet (38). Le film de silicium possède de préférence une épaisseur de l'ordre de 0,5 à 2 $g(m)m (c'est-à-dire qu'il est d'une épaisseur similaire aux dimensions des caractéristiques de texture présente sur la surface de la couche de SiO2). Bien que le film de silicium produit selon ledit procédé épouse de manière lâche la surface texturée sur laquelle il est formé, les surfaces opposées dudit film sont essentiellement non parallèles, au moins à une petite échelle, si bien que la lumière traversera généralement ledit film de silicium à un certain angle par rapport à la surface de silicium. Plus important encore, la lumière atteindra le plus souvent la surface arrière du film de silicium (surface supérieure, sur la figure) à un angle important par rapport à la perpendiculaire à la surface (36), de sorte que pour un nombre élevé d'incidences, une réflexion interne totale se produira. La surface (36) peut également être couverte d'une matière réfléchissante (40) (telle qu'un contact métallique arrière) pour contribuer à la réflexion de la lumière interne atteignant cette surface.
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