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Machine translation
1. (WO2000028597) NONVOLATILE MEMORY
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/028597    International Application No.:    PCT/US1999/024272
Publication Date: 18.05.2000 International Filing Date: 19.10.1999
Chapter 2 Demand Filed:    09.05.2000    
IPC:
G11C 16/04 (2006.01), H01L 27/115 (2006.01), H01L 29/788 (2006.01)
Applicants: PROGRAMMABLE SILICON SOLUTIONS [US/US]; 628A East Evelyn Sunnyvale, CA 94086 (US) (For All Designated States Except US).
LIU, David, Kuan-Yu [US/US]; (US) (For US Only).
WONG, Ting-wah [US/US]; (US) (For US Only).
HUI, Kelvin, Yupak [CN/US]; (US) (For US Only)
Inventors: LIU, David, Kuan-Yu; (US).
WONG, Ting-wah; (US).
HUI, Kelvin, Yupak; (US)
Agent: TROP, Timothy; Trop, Pruner, Hu & Miles, P.C. Suite 100 8554 Katy Freeway Houston, TX 77024 (US)
Priority Data:
09/189,249 10.11.1998 US
Title (EN) NONVOLATILE MEMORY
(FR) MEMOIRE NON VOLATILE
Abstract: front page image
(EN)A nonvolatile memory cell (10a, 10b) which is highly scalable includes a cell formed in a triple well (44, 46). A pair of sources (32, 34) for a pair of cells on adjacent word lines (36) each acts as the emitter of a lateral bipolar transistor (68). The lateral bipolar transistor (68) of one cell (10) operates as a charge injector for the other cell (10). The charge injector provides carriers for substrate hot carrier injection onto a floating gate (28b).
(FR)La présente invention concerne une cellule de mémoire non volatile (10a, 10b), hautement évolutive, comprenant une cellule formée dans un puits triple (44, 46). Chaque paire de sources (32, 34), pour une paire de cellules sur des lignes mot adjacentes (36), agit comme émetteur d'un transistor bipolaire latéral (68). Le transistor bipolaire latéral (68) d'une cellule (10) fonctionne comme injecteur de charge pour l'autre cellule (10). L'injecteur de charge fournit des porteurs destinés à injecter des porteurs chauds de substrat sur une grille flottante (28b).
Designated States: AE, AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CR, CU, CZ, DE, DK, DM, EE, ES, FI, GB, GD, GE, GH, GM, HR, HU, ID, IL, IN, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MA, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, TZ, UA, UG, US, UZ, VN, YU, ZA, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SL, SZ, TZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, GW, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)