Feedback
Settings

Settings

Goto Application

1. WO2000028571 - METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE

PermaLink
Publication Number WO/2000/028571
Publication Date 18.05.2000
International Application No. PCT/EP1999/008057
International Filing Date 25.10.1999
Chapter 2 Demand Filed 08.06.2000
IPC
H01J 37/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
CPC
H01J 2237/0044
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
004Charge control of objects or beams
0041Neutralising arrangements
0044of objects being observed or treated
H01J 2237/2002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
20Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
2002Controlling environment of sample
H01J 2237/2608
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
2237Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
26Electron or ion microscopes
2602Details
2605operating at elevated pressures, e.g. atmosphere
2608with environmental specimen chamber
H01J 37/026
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
026Means for avoiding or neutralising unwanted electrical charges on tube components
H01J 37/3056
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
305for casting, melting, evaporating or etching
3053for evaporating or etching
3056for microworking, e.g. etching of gratings, trimming of electrical components
Applicants
  • FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. [DE]/[DE] (AllExceptUS)
  • BRÜNGER, Wilhelm [DE]/[DE] (UsOnly)
Inventors
  • BRÜNGER, Wilhelm
Agents
  • SCHOPPE, Fritz
Priority Data
198 51 622.309.11.1998DE
Publication Language German (DE)
Filing Language German (DE)
Designated States
Title
(DE) VERFAHREN ZUM UNTERSUCHEN UND/ODER ZUM MODIFIZIEREN VON OBERFLÄCHENSTRUKTUREN EINER PROBE
(EN) METHOD FOR EXAMINING AND/OR MODIFYING SURFACE STRUCTURES OF A SAMPLE
(FR) PROCEDE POUR EXAMINER ET/OU MODIFIER DES STRUCTURES SUPERFICIELLES D'ECHANTILLONS
front page image
Abstract
(DE)
Bei einem Verfahren zum Untersuchen der Oberflächenstrukturen einer Probe (14) oder zum Modifizieren der Oberflächenstrukturen einer Probe (14) mittels eines Strahles (11), der auf die Oberflächenstruktur der Probe (14) auftritt, wird Gas zumindest im Auftreffbereich (13) des Strahls (11) auf die Oberflächenstruktur der Probe (14) diskontinuierlich, vorzugsweise gepulst zugeführt.
(EN)
The invention relates to method for examining the surface structures of a sample (14) or for modifying the surface structures of a sample (14) using a beam (11) which strikes the surface structure of said sample (14). According to the inventive method, a gas is intermittently supplied, preferably in a pulsed mode, to the surface structure of the sample (14) at least in the area of incidence (13) of the beam (11).
(FR)
L'invention concerne un procédé permettant d'examiner les structures superficielles d'un échantillon (14) ou de modifier les structures superficielles d'un échantillon (14) au moyen d'un faisceau (11) qui arrive sur la structure superficielle de l'échantillon (14) concerné. Selon ce procédé, du gaz est acheminé de préférence sous forme pulsée en discontinu sur la structure superficielle de l'échantillon (14).
Also published as
DE000019851622
EP1114435
JP2002529902
US6661005
Latest bibliographic data on file with the International Bureau
# -