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Machine translation
1. (WO2000024548) POLISHING APPARATUS AND A SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/2000/024548    International Application No.:    PCT/JP1998/004881
Publication Date: 04.05.2000 International Filing Date: 28.10.1998
Chapter 2 Demand Filed:    07.12.1998    
IPC:
B24B 53/007 (2006.01), B24B 53/02 (2012.01), B24B 53/12 (2006.01)
Applicants: HITACHI, LTD. [JP/JP]; 6, Kanda Surugadai 4-chome Chiyoda-ku Tokyo 101-8010 (JP) (For All Designated States Except US).
MORIYAMA, Shigeo [JP/JP]; (JP) (For US Only).
ISHIDA, Yoshihiro [JP/JP]; (JP) (For US Only).
KUGAYA, Takashi [JP/JP]; (JP) (For US Only).
OOTSUKI, Shigeo [JP/JP]; (JP) (For US Only).
KATAGIRI, Soichi [JP/JP]; (JP) (For US Only).
NISHIMURA, Sadayuki [JP/JP]; (JP) (For US Only).
KAWAI, Ryosei [JP/JP]; (JP) (For US Only).
YASUI, Kan [JP/JP]; (JP) (For US Only)
Inventors: MORIYAMA, Shigeo; (JP).
ISHIDA, Yoshihiro; (JP).
KUGAYA, Takashi; (JP).
OOTSUKI, Shigeo; (JP).
KATAGIRI, Soichi; (JP).
NISHIMURA, Sadayuki; (JP).
KAWAI, Ryosei; (JP).
YASUI, Kan; (JP)
Agent: SAKUTA, Yasuo; Hitachi, Ltd. 5-1, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8220 (JP)
Priority Data:
Title (EN) POLISHING APPARATUS AND A SEMICONDUCTOR MANUFACTURING METHOD USING THE SAME
(FR) DISPOSITIF DE POLISSAGE ET PROCEDE DE FABRICATION DE SEMI-CONDUCTEURS AU MOYEN DUDIT DISPOSITIF
Abstract: front page image
(EN)The surface of a grindstone is dressed by constant cutting depth processing, preventing the surface of the grindstone from cracking, which might cause scratches, and dressing the dresser. The planarity of the surface of the dresser can be assured. Even if a grindstone as thick as several centimeters is used, the planarity can be maintained throughout the dressing and it is possible to dress a grindstone with small in-plane variation at all times. This can prolong the service life of the dresser significantly. By performing such constant cutting depth dressing while machining a wafer, the machining rate can be maintained and at the same time the throughput of the apparatus can be improved. The apparatus and the method are effective in planarizing an uneven surface of a wafer of any of various types.
(FR)La présente invention concerne un procédé de dressage de meule à une profondeur constante, ce qui empêche l'apparition dans la surface de la meule de fissures pouvant provoquer des rayures, et aiguise le dresse-meule, dont la planéité est ainsi garantie. Cette planéité peut être maintenue pendant le dressage, même si la meule mesure plusieurs centimètres d'épaisseur, pour de faibles variations de surface dans le temps. Ce procédé peut permettre d'augmenter sensiblement la durée de service du dresse-meule. Grâce au dressage constant pendant l'usinage d'une tranche, il est possible de maintenir la cadence de production et d'améliorer parallèlement le rendement de l'installation. Ce dispositif et ce procédé permettent de rendre plane une surface irrégulière quel que soit le type de tranche.
Designated States: CN, JP, KR, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: Japanese (JA)
Filing Language: Japanese (JA)