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1. WO2000012779 - METHODS FOR PREPARING RUTHENIUM OXIDE FILMS

Publication Number WO/2000/012779
Publication Date 09.03.2000
International Application No. PCT/US1999/018193
International Filing Date 11.08.1999
Chapter 2 Demand Filed 27.03.2000
IPC
C23C 16/40 2006.01
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
H01L 21/02 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/285 2006.01
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/268158
283Deposition of conductive or insulating materials for electrodes
285from a gas or vapour, e.g. condensation
CPC
C23C 16/40
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
22characterised by the deposition of inorganic material, other than metallic material
30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
40Oxides
H01L 21/28556
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28556by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
H01L 28/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
28Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
40Capacitors
60Electrodes
Applicants
  • MICRON TECHNOLOGY, INC. [US]/[US]
Inventors
  • VAARTSTRA, Brian, A.
  • MARSH, Eugene, P.
Agents
  • MUETING, Ann, M.
Priority Data
09/140,93227.08.1998US
Publication Language English (EN)
Filing Language English (EN)
Designated States
Title
(EN) METHODS FOR PREPARING RUTHENIUM OXIDE FILMS
(FR) PROCEDES DE PREPARATION DE FILMS D'OXYDE DE RUTHENIUM
Abstract
(EN)
The present invention provides methods for the preparation of ruthenium oxide films from liquid ruthenium complexes of the formula (diene)Ru(CO)3 wherein 'diene' refers to linear, branched, or cyclic dienes, bicylic dienes, tricyclic dienes, fluorinated derivatives thereof, combinations thereof, or derivatives thereof additionally containing heteroatoms such as halide, Si, S, Se, P, As, N, or O, and an oxidizing gas. Preferred examples are cyclohexadine or cycloheptadine ruthenium tricarbonyl with oxygen gas.
(FR)
Cette invention porte sur des procédés de préparation de films d'oxyde de ruthénium à partir de complexes de ruthénium liquides de la formule (diène)Ru(CO)3 dans laquelle « diène » fait référence à des diènes linéaires, ramifiés ou cycliques, des diènes bicycliques, des diènes tricycliques, des dérivés fluorés de ceux-ci et des dérivés contenant de plus des hétéroatomes tels que halogénure, Si, S, Se, P, As, N ou O, et un gaz d'oxydation. Des exemples préférés sont cyclohexadine ou cycloheptadine ruthénium tricarbonyl avec un gaz oxygène.
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