Processing

Please wait...

Settings

Settings

Goto Application

1. WO1999056308 - EXPOSURE SYSTEM AND METHOD OF MANUFACTURING MICRO DEVICE

Publication Number WO/1999/056308
Publication Date 04.11.1999
International Application No. PCT/JP1999/002268
International Filing Date 28.04.1999
Chapter 2 Demand Filed 25.11.1999
IPC
G03F 9/00 2006.01
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
CPC
G03F 9/7076
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7073Alignment marks and their environment
7076Mark details, e.g. phase grating mark, temporary mark
G03F 9/7084
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
9Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
70for microlithography
7073Alignment marks and their environment
7084Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
Applicants
  • NIKON CORPORATION [JP]/[JP] (AllExceptUS)
  • KOBAYASHI, Mitsuru [JP]/[JP] (UsOnly)
  • KANEKO, Ryoichi [JP]/[JP] (UsOnly)
Inventors
  • KOBAYASHI, Mitsuru
  • KANEKO, Ryoichi
Agents
  • ONDA, Hironori
Priority Data
10/11883128.04.1998JP
Publication Language Japanese (JA)
Filing Language Japanese (JA)
Designated States
Title
(EN) EXPOSURE SYSTEM AND METHOD OF MANUFACTURING MICRO DEVICE
(FR) SYSTEME D'EXPOSITION ET PROCEDE DE PRODUCTION D'UN MICRODISPOSITIF
Abstract
(EN)
An exposure system for precisely and quickly transferring mask patterns to a substrate with a plurality of pattern layers formed, and a method of manufacturing micro devices on the exposure device. Wafer marks (WM1) (or alternative (WM1')) of gate electrode layers (Lg) and wafer marks (WM2) of second inner dielectric layers (Li2) are formed on street lines of a wafer (W). Mark bars WMnm (n=1, 2, m=1 to 4) of the wafer marks (WM1) and (WM2) are alternately arranged, and composite marks are formed. The composite marks are detected together in an alignment system, and position information on the wafer marks (WM1) and (WM2) is determined from the detected results. Then, the circuit patterns on a reticule are aligned with a shot region (SAn) on the wafer based on the determined position information.
(FR)
L'invention concerne un système d'exposition permettant de transférer avec précision et rapidité des motifs de masques sur un substrat sur lequel sont formées plusieurs couches de motifs et un procédé de production de microdispositifs sur le dispositif d'exposition. Des marques de plaquettes (WM1) (ou en remplacement (WM1')) de couches d'électrodes de grille (Lg) et des marques de plaquettes (WM2) de secondes couches diélectriques intérieures (Li2) sont formées sur des lignes formant des rues d'une plaquette (W). Des barres de marques (WMnm) (n=1, 2, m=1 à 4) des marques de plaquettes (WM1) et (WM2) sont agencées de façon alternée et des marques composites sont formées. Les marques composites sont détectées dans un système d'alignement, et des informations de position sur les marques de plaquettes (WM1 et WM2) sont déterminées à partir des résultats détectés. Ensuite, les motifs des circuits sur un réticule sont alignés avec une région ciblée (SAn) sur la plaquette, sur la base des informations de position déterminées.
Latest bibliographic data on file with the International Bureau