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Machine translation
1. (WO1999040615) METHOD AND APPARATUS FOR LOW-TEMPERATURE ANNEALING OF METALLIZATION MICRO-STRUCTURES IN THE PRODUCTION OF A MICROELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1999/040615    International Application No.:    PCT/US1999/002504
Publication Date: 12.08.1999 International Filing Date: 04.02.1999
Chapter 2 Demand Filed:    29.12.1999    
IPC:
H01L 21/768 (2006.01)
Applicants: SEMITOOL, INC. [US/US]; 655 W. Reserve Drive Kalispell, MT 59901 (US) (For All Designated States Except US).
RITZDORF, Thomas, L. [US/US]; (US) (For US Only).
STEVENS, E., Henry [US/US]; (US) (For US Only).
CHEN, LinLin [CA/US]; (US) (For US Only).
GRAHAM, Lyndon, W. [US/US]; (US) (For US Only).
DUNDAS, Curt [US/US]; (US) (For US Only)
Inventors: RITZDORF, Thomas, L.; (US).
STEVENS, E., Henry; (US).
CHEN, LinLin; (US).
GRAHAM, Lyndon, W.; (US).
DUNDAS, Curt; (US)
Agent: POLIT, Robert, B.; Rockey, Milnamow & Katz, Ltd. 47th floor Two Prudential Plaza Chicago, IL 60601-6710 (US).
CHAPA, Lawrence, J.; Rockey, Milnamow & Katz, Ltd. 47th floor Two Prudential Plaza 180 North Stetson Avenue Chicago, IL 60601 (US)
Priority Data:
09/018,783 04.02.1998 US
60/087,432 01.06.1998 US
Title (EN) METHOD AND APPARATUS FOR LOW-TEMPERATURE ANNEALING OF METALLIZATION MICRO-STRUCTURES IN THE PRODUCTION OF A MICROELECTRONIC DEVICE
(FR) PROCEDE ET APPAREIL DE RECUIT A BASSE TEMPERATURE INTERVENANT APRES METALLISATION DE MICROSTRUCTURES DESTINEES A UN DISPOSITIF MICRO-ELECTRONIQUE
Abstract: front page image
(EN)A method for filling recessed micro-structures (505) at a surface of a microelectronic workpiece (500), such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
(FR)La présente invention concerne un procédé de remplissage par métallisation de microstructures en creux (505) à la surface d'un composant micro-électronique (500), tel qu'une tranche de semi-conducteur. Pour déposer une couche de métal à l'intérieur des microstructures, on procède notamment par galvanoplastie, ce qui donne des grains métalliques suffisamment petits pour remplir sensiblement les microstructures en creux. Le métal déposé est ensuite soumis à un recuit à une température inférieure à 100° C, voire à la température ambiante, afin d'obtenir un grossissement du grain propre à optimiser les propriétés électriques. L'invention concerne également un appareil pour l'exécution de procédés de recuit spécifiques.
Designated States: CN, GD, IN, JP, KR, SG, US.
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE).
Publication Language: English (EN)
Filing Language: English (EN)