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1. (WO1999040615) METHOD AND APPARATUS FOR LOW-TEMPERATURE ANNEALING OF METALLIZATION MICRO-STRUCTURES IN THE PRODUCTION OF A MICROELECTRONIC DEVICE
Latest bibliographic data on file with the International Bureau

Pub. No.: WO/1999/040615 International Application No.: PCT/US1999/002504
Publication Date: 12.08.1999 International Filing Date: 04.02.1999
Chapter 2 Demand Filed: 29.12.1999
IPC:
H01L 21/768 (2006.01)
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71
Manufacture of specific parts of devices defined in group H01L21/7086
768
Applying interconnections to be used for carrying current between separate components within a device
Applicants:
SEMITOOL, INC. [US/US]; 655 W. Reserve Drive Kalispell, MT 59901, US (AllExceptUS)
RITZDORF, Thomas, L. [US/US]; US (UsOnly)
STEVENS, E., Henry [US/US]; US (UsOnly)
CHEN, LinLin [CA/US]; US (UsOnly)
GRAHAM, Lyndon, W. [US/US]; US (UsOnly)
DUNDAS, Curt [US/US]; US (UsOnly)
Inventors:
RITZDORF, Thomas, L.; US
STEVENS, E., Henry; US
CHEN, LinLin; US
GRAHAM, Lyndon, W.; US
DUNDAS, Curt; US
Agent:
POLIT, Robert, B.; Rockey, Milnamow & Katz, Ltd. 47th floor Two Prudential Plaza Chicago, IL 60601-6710, US
CHAPA, Lawrence, J.; Rockey, Milnamow & Katz, Ltd. 47th floor Two Prudential Plaza 180 North Stetson Avenue Chicago, IL 60601, US
Priority Data:
09/018,78304.02.1998US
60/087,43201.06.1998US
Title (EN) METHOD AND APPARATUS FOR LOW-TEMPERATURE ANNEALING OF METALLIZATION MICRO-STRUCTURES IN THE PRODUCTION OF A MICROELECTRONIC DEVICE
(FR) PROCEDE ET APPAREIL DE RECUIT A BASSE TEMPERATURE INTERVENANT APRES METALLISATION DE MICROSTRUCTURES DESTINEES A UN DISPOSITIF MICRO-ELECTRONIQUE
Abstract:
(EN) A method for filling recessed micro-structures (505) at a surface of a microelectronic workpiece (500), such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the micro-structures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed micro-structures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.
(FR) La présente invention concerne un procédé de remplissage par métallisation de microstructures en creux (505) à la surface d'un composant micro-électronique (500), tel qu'une tranche de semi-conducteur. Pour déposer une couche de métal à l'intérieur des microstructures, on procède notamment par galvanoplastie, ce qui donne des grains métalliques suffisamment petits pour remplir sensiblement les microstructures en creux. Le métal déposé est ensuite soumis à un recuit à une température inférieure à 100° C, voire à la température ambiante, afin d'obtenir un grossissement du grain propre à optimiser les propriétés électriques. L'invention concerne également un appareil pour l'exécution de procédés de recuit spécifiques.
Designated States: CN, GD, IN, JP, KR, SG, US
European Patent Office (AT, BE, CH, CY, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
Publication Language: English (EN)
Filing Language: English (EN)