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Machine translation
1. (WO1999040478) LARGE APERTURE OPTICAL IMAGE SHUTTER
Latest bibliographic data on file with the International Bureau   

Pub. No.:    WO/1999/040478    International Application No.:    PCT/IL1998/000060
Publication Date: 12.08.1999 International Filing Date: 08.02.1998
Chapter 2 Demand Filed:    09.12.1998    
IPC:
G02F 1/017 (2006.01)
Applicants: 3DV SYSTEMS LTD. [IL/IL]; Building 7 Industrial Park P.O. Box 249 20692 Yokneam (IL) (For All Designated States Except US).
MANASSEN, Amnon [IL/IL]; (IL) (For US Only).
YAHAV, Giora [IL/IL]; (IL) (For US Only).
IDDAN, Gavriel, J. [IL/IL]; (IL) (For US Only)
Inventors: MANASSEN, Amnon; (IL).
YAHAV, Giora; (IL).
IDDAN, Gavriel, J.; (IL)
Agent: FENSTER, Paul; Fenster & Company Patent Attorneys Ltd. P.O. Box 2741 49127 Petach Tikva (IL)
Priority Data:
Title (EN) LARGE APERTURE OPTICAL IMAGE SHUTTER
(FR) OBTURATEUR D'IMAGE OPTIQUE A LARGE OUVERTURE
Abstract: front page image
(EN)An optical image shutter is provided having a multiplicity of thin layers of alternating narrow and wide gap semiconductor material stacked to form an MQW structure and electrodes located on at least two semiconductor surfaces of the image shutter, wherein the electrodes are configured so that a voltage difference applied between them produces an electric field that is temporally and spatially substantially uniform in the volume of the MQW structure and wherein the aperture of the image shutter is greater than 4 square mm.
(FR)L'invention concerne un obturateur d'image optique comportant plusieurs couches de matière à semiconducteurs à bande interdite réduite et à bande interdite large empilées de manière à former une structure à puits quantiques multiples (MQW), ainsi que des électrodes situées sur au moins deux surfaces à semiconducteurs de l'obturateur d'images, les électrodes étant configurées de sorte qu'une différence de tension appliquée entre elles produise un champ électrique sensiblement uniforme dans le temps et dans l'espace dans le volume de la structure MQW, l'ouverture de l'obturateur d'image étant supérieure à 4 mm carrés.
Designated States: AL, AM, AT, AU, AZ, BA, BB, BG, BR, BY, CA, CH, CN, CU, CZ, DE, DK, EE, ES, FI, GB, GE, GH, GM, GW, HU, ID, IL, IS, JP, KE, KG, KP, KR, KZ, LC, LK, LR, LS, LT, LU, LV, MD, MG, MK, MN, MW, MX, NO, NZ, PL, PT, RO, RU, SD, SE, SG, SI, SK, SL, TJ, TM, TR, TT, UA, UG, US, UZ, VN, YU, ZW.
African Regional Intellectual Property Organization (GH, GM, KE, LS, MW, SD, SZ, UG, ZW)
Eurasian Patent Organization (AM, AZ, BY, KG, KZ, MD, RU, TJ, TM)
European Patent Office (AT, BE, CH, DE, DK, ES, FI, FR, GB, GR, IE, IT, LU, MC, NL, PT, SE)
African Intellectual Property Organization (BF, BJ, CF, CG, CI, CM, GA, GN, ML, MR, NE, SN, TD, TG).
Publication Language: English (EN)
Filing Language: English (EN)