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1. WO1999032896 - NICKEL-MANGANESE PINNED SPIN VALVE/GMR MAGNETIC SENSORS

Publication Number WO/1999/032896
Publication Date 01.07.1999
International Application No. PCT/US1997/023978
International Filing Date 23.12.1997
IPC
G01R 33/09 2006.1
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices
09Magneto-resistive devices
G11B 5/39 2006.1
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads
39using magneto-resistive devices
H01F 10/32 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
H01F 41/30 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
41Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
14for applying magnetic films to substrates
30for applying nanostructures, e.g. by molecular beam epitaxy (MBE)
H01L 43/10 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
43Devices using galvano-magnetic or similar magnetic effects; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
10Selection of materials
CPC
B82Y 10/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
10Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
B82Y 25/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
25Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
B82Y 40/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
40Manufacture or treatment of nanostructures
G01R 33/093
GPHYSICS
01MEASURING; TESTING
RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33Arrangements or instruments for measuring magnetic variables
02Measuring direction or magnitude of magnetic fields or magnetic flux
06using galvano-magnetic devices, e.g. Hall effect devices; using magneto-resistive devices
09Magnetoresistive devices
093using multilayer structures, e.g. giant magnetoresistance sensors
G11B 2005/3996
GPHYSICS
11INFORMATION STORAGE
BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
5Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
127Structure or manufacture of heads, e.g. inductive
33Structure or manufacture of flux-sensitive heads, ; i.e. for reproduction only; Combination of such heads with means for recording or erasing only
39using magneto-resistive devices ; or effects
3996large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
H01F 10/324
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
10Thin magnetic films, e.g. of one-domain structure
32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
324Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
Applicants
  • SEAGATE TECHNOLOGY, INC. [US]/[US] (AllExceptUS)
  • MAO, Sining [CN]/[US] (UsOnly)
  • MURDOCK, Edward, S. [US]/[US] (UsOnly)
Inventors
  • MAO, Sining
  • MURDOCK, Edward, S.
Agents
  • VELDHUIS-KROEZE, John, D.
Priority Data
Publication Language English (en)
Filing Language English (EN)
Designated States
Title
(EN) NICKEL-MANGANESE PINNED SPIN VALVE/GMR MAGNETIC SENSORS
(FR) CAPTEURS MAGNETIQUES GMR A VANNE ROTATIVE ET A BROCHAGE PAR COUCHES DE NICKEL ET DE MANGANESE
Abstract
(EN) A spin valve sensor (10) and a method of sensor include a stack having a first layer of ferromagnetic material (19) and a second layer of ferromagnetic material (25), with the second layer of ferromagnetic material having a thickness of less than about 100 Å. The stack also includes a first layer of non-ferromagnetic conducting material (20) positioned between the first and second layers of ferromagnetic material. The stack further includes an NiMn pinning layer (26) positioned adjacent to the second layer of ferromagnetic material (25) such that the pinning layer is in contact with the second layer of ferromagnetic material. The NiMn pinning layer has a thickness of less than about 300 Å and provides a pinning field for pinning a magnetization of the second layer of ferromagnetic material in a first direction. A rocking curve width of the stack is preferably less than about 4 degrees.
(FR) L'invention concerne un capteur à vanne rotative (10) et son procédé de production. Ledit capteur comprend une pile présentant une première couche de matériau ferromagnétique (19) et une seconde couche de matériau ferromagnétique (25), cette seconde couche présentant une épaisseur inférieure à environ 100 Å. Ladite pile comporte également une première couche d'un matériau conducteur non ferromagnétique (20), placée entre la première et la seconde couche de matériau ferromagnétique. Ladite pile comporte également une couche de brochage en nickel et en manganèse (NiMn) (26) placée sur la seconde couche de matériau ferromagnétique (25), cette couche de brochage étant en contact avec la seconde couche de matériau ferromagnétique. Ladite couche de brochage en NiMn présente une épaisseur inférieure à environ 300 Å et fournit un champ de brochage servant à brocher une aimantation de la seconde couche de matériau ferromagnétique dans un premier sens. La largeur de la courbe de basculement de la pile est, de préférence, inférieure à environ 4 degrés.
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