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1. WO1999032691 - INSULATING MATERIAL, SUBSTRATE COVERED WITH AN INSULATING FILM, METHOD OF PRODUCING THE SAME, AND THIN-FILM DEVICE

Publication Number WO/1999/032691
Publication Date 01.07.1999
International Application No. PCT/JP1998/005761
International Filing Date 18.12.1998
Chapter 2 Demand Filed 30.04.1999
IPC
H01L 21/02 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
H01L 21/316 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
H01L 29/51 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
40Electrodes
43characterised by the materials of which they are formed
49Metal-insulator semiconductor electrodes
51Insulating materials associated therewith
H01L 29/78 2006.1
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
CPC
H01L 21/02153
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02142the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
02153the material containing titanium, e.g. TiSiOx
H01L 21/02161
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
02142the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides
02161the material containing more than one metal element
H01L 21/02197
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02197the material having a perovskite structure, e.g. BaTiO3
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02205
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
H01L 21/02271
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
Applicants
  • SHARP KABUSHIKI KAISHA [JP]/[JP] (AllExceptUS)
  • KIJIMA, Takeshi [JP]/[JP] (UsOnly)
  • MATSUNAGA, Hironori [JP]/[JP] (UsOnly)
Inventors
  • KIJIMA, Takeshi
  • MATSUNAGA, Hironori
Agents
  • NOGAWA, Shintaro
Priority Data
9/36543119.12.1997JP
Publication Language Japanese (ja)
Filing Language Japanese (JA)
Designated States
Title
(EN) INSULATING MATERIAL, SUBSTRATE COVERED WITH AN INSULATING FILM, METHOD OF PRODUCING THE SAME, AND THIN-FILM DEVICE
(FR) MATERIAU ISOLANT, SUBSTRAT RECOUVERT D'UNE COUCHE ISOLANTE, PROCEDE DE PRODUCTION DE CE DERNIER ET DISPOSITIF A COUCHES MINCES
Abstract
(EN) A bismuth silicate film (insulating film) (3) of Bi2SiO5 oriented predominantly in the direction (100) is formed on an Si substrate (2), and a ferroelectric thin film (4) is formed on the bismuth silicate film (3) to create an MFIS structure having a c-axis-oriented ferroelectric thin film (4) formed with good reproduceability. A highly reliable thin-film device is produced by applying the MFIS structure to a FET.
(FR) Dans la présente invention, une couche de silicate de bismuth (3) (couche isolante) Bi2SiO5 principalement orientée dans la direction (100) est formée sur un substrat en Si (2), et une couche ferroélectrique mince (4) est formée sur la couche de silicate de bismuth (3) de façon que l'on obtient une structure MFIS à couche ferroélectrique mince (4) orientée selon un axe c et dotée d'une bonne reproductibilité. En appliquant la structure MFIS à un transistor à effet de champ, on obtient un dispositif à couches minces extrêmement fiable.
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